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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 21, Pages 29–33
DOI: https://doi.org/10.21883/PJTF.2019.21.48470.17961 (Mi pjtf5278) 		 
This article is cited in 3 scientific papers (total in 3 papers)

InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics

N. A. Maleevab, A. P. Vasil'evc, A. G. Kuz'menkovc, M. A. Bobrova, M. M. Kulaginaa, S. I. Troshkova, S. N. Maleeva, V. A. Belyakovd, E. V. Petryakovad, Yu. P. Kudryashovad, E. L. Fefelovad, I. V. Makartsevd, S. A. Blokhina, F. A. Akhmedove, A. V. Egorove, A. G. Fefelovd, V. M. Ustinovabc

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
d JSC "NPP Salyut", Nizhny Novgorod, Russia
e NPO TECHNOMASH, Moscow, Russia
Full-text PDF (210 kB) Citations (3)
DOI: https://doi.org/10.21883/PJTF.2019.21.48470.17961
Abstract: A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a $T$-shaped gate 120 nm in length consist of four fingers, each 30 $\mu$m in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.
Keywords: high-electron-mobility transistor, InP, breakdown voltage, millimeter wave amplifiers.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations 5
N.A. Maleev, M.A. Bobrov, M.M. Kulagina, S.A. Blo-khin, and V.M. Ustinov acknowledge support under the Presidium of the Russian Academy of Sciences under Program no. 5 “Photonic Technologies in Probing Inhomogeneous Media and Biological Objects”.
Received: 03.07.2019
Revised: 03.07.2019
Accepted: 11.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 11, Pages 1092–1096
DOI: https://doi.org/10.1134/S1063785019110075
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Maleev, A. P. Vasil'ev, A. G. Kuz'menkov, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, S. N. Maleev, V. A. Belyakov, E. V. Petryakova, Yu. P. Kudryashova, E. L. Fefelova, I. V. Makartsev, S. A. Blokhin, F. A. Akhmedov, A. V. Egorov, A. G. Fefelov, V. M. Ustinov, “InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 29–33; Tech. Phys. Lett., 45:11 (2019), 1092–1096
Citation in format AMSBIB
\Bibitem{MalVasKuz19}
\by N.~A.~Maleev, A.~P.~Vasil'ev, A.~G.~Kuz'menkov, M.~A.~Bobrov, M.~M.~Kulagina, S.~I.~Troshkov, S.~N.~Maleev, V.~A.~Belyakov, E.~V.~Petryakova, Yu.~P.~Kudryashova, E.~L.~Fefelova, I.~V.~Makartsev, S.~A.~Blokhin, F.~A.~Akhmedov, A.~V.~Egorov, A.~G.~Fefelov, V.~M.~Ustinov
\paper InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 21
\pages 29--33
\mathnet{http://mi.mathnet.ru/pjtf5278}
\crossref{https://doi.org/10.21883/PJTF.2019.21.48470.17961}
\elib{https://elibrary.ru/item.asp?id=41848461}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 11
\pages 1092--1096
\crossref{https://doi.org/10.1134/S1063785019110075}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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