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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, U. P. Asatova, “Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 23–26   ; Tech. Phys. Lett., 46:11 (2020), 1124–1127 |
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2019 |
| 2. |
A. S. Saidov, K. A. Amonov, A. Yu. Leiderman, “Research of the dependence of current-voltage characteristics of $p$-Si-$n$-(Si$_2$)$_{1-x-y}$(Ge$_2$)$_{x}$(ZnSe)$_{y}$-structures on temperature”, Comp. nanotechnol., 6:3 (2019), 16–21 |
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2018 |
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A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, K. A. Amonov, “Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1066–1070 ; Semiconductors, 52:9 (2018), 1188–1192 |
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2016 |
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S. Zaynabidinov, A. S. Saidov, A. Yu. Leiderman, M. U. Kalanov, Sh. N. Usmonov, V. M. Rustamova, A. Boboev, “Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 60–66 ; Semiconductors, 50:1 (2016), 59–65 |
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A. S. Saidov, A. Yu. Leiderman, A. B. Karshiev, “The thermovoltaic effect in variband solid solution Si$_{1-x}$Ge$_{x}$ (0 $\le x\le$ 1)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 21–27 ; Tech. Phys. Lett., 42:7 (2016), 725–728 |
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1984 |
| 6. |
A. A. Andreev, O. A. Golikova, P. M. Karageorgii-Alkalaev, A. Yu. Leiderman, M. M. Mezdrogina, V. S. Rubin, N. A. Feoktistov, “On the Nature of Dark Currents in the Structures with Schottky Barriers Hydrogenated Silicon”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 373–376 |
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1971 |
| 7. |
P. M. Karageorgii-Alkalaev, A. Yu. Leiderman, “Instability of uniform steady state of a semiconductor due to the thermal deformation of its forbidden zone”, Dokl. Akad. Nauk SSSR, 201:4 (1971), 820–822 |
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