The thermovoltaic effect in variband solid solution Si$_{1-x}$Ge$_{x}$ (0 $\le x\le$ 1)

The thermovoltaic effect in films of variband solid solution Si$_{1-x}$Ge$_{x}$ (0 $\le x\le$ 1) has been observed for the first time. The samples comprised $n$-Si–$p$-Si$_{1-x}$Ge$_{x}$ (0 $\le x\le$ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 $\mu$A appeared on heating samples in a temperature range from 40 to 250$^\circ$C.