|
This article is cited in 1 scientific paper (total in 1 paper)
Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures
A. S. Saidova, A. Yu. Leidermana, Sh. N. Usmonovab, U. P. Asatovac a Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
b Chirchiq State Pedagogical Institute
c Urgench State University named after Al-Khorezmi, Urgench, Uzbekistan
Abstract:
The current-voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures has been studied. It has been shown that at low voltages $V<0.5$ V, the current-voltage characteristic is described by the exponential law: $I=I_{0}\exp(qV/ckT)$, and at large ones from 0.5 to 1.8 V power laws: $I=AV^{m}$ with different values of the coefficient A and exponent m at various voltages. At higher voltages – from 2.10 to 2.48 V, a sublinear part is observed, which is described by the law: $V=V_{0}\exp (Jd/2kT\mu_{p}N_{t})$.
Keywords:
current–voltage characteristics, double injection, solid solution, heterostructure.
Received: 21.02.2020 Revised: 23.07.2020 Accepted: 01.08.2020
Citation:
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, U. P. Asatova, “Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 23–26; Tech. Phys. Lett., 46:11 (2020), 1124–1127
Linking options:
https://www.mathnet.ru/eng/pjtf4935 https://www.mathnet.ru/eng/pjtf/v46/i22/p23
|
Statistics & downloads: |
Abstract page: | 48 | Full-text PDF : | 48 |
|