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This article is cited in 2 scientific papers (total in 2 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, K. A. Amonov Starodubtsev Physical–Technical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
Abstract:
The current–voltage characteristics of $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as $V =V_0\exp(Jad)$. The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.
Keywords:
Deep Impurity, Sublinear Portion, Ambipolar Drift Velocity, Hole Trapping Centers, Majority Carrier Mobility.
Received: 16.08.2017 Accepted: 28.10.2017
Citation:
A. S. Saidov, A. Yu. Leiderman, Sh. N. Usmonov, K. A. Amonov, “Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1066–1070; Semiconductors, 52:9 (2018), 1188–1192
Linking options:
https://www.mathnet.ru/eng/phts5740 https://www.mathnet.ru/eng/phts/v52/i9/p1066
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