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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 60–66
(Mi phts6564)
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This article is cited in 4 scientific papers (total in 4 papers)
Surface, interfaces, thin films
Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films
S. Zaynabidinova, A. S. Saidovb, A. Yu. Leidermanb, M. U. Kalanovc, Sh. N. Usmonovb, V. M. Rustamovac, A. Boboevca a Babur Andizhan State University, Andizhan, Uzbekistan
b Starodubtsev Physical–Technical Institute, Tashkent, Uzbekistan
c Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Tashkent
Abstract:
The possibility of growing the (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ alloy on GaAs substrates by the method of liquid-phase epitaxy from a tin solution–melt is shown. X-ray diffraction shows that the grown film is single-crystal with the (100) orientation and has the sphalerite structure. The crystal-lattice parameter of the film is $a_f$ = 0.56697 nm. The features of the spectral dependence of the photosensitivity are caused by the formation of various complexes of charged components. It is established that the I–V characteristic of such structures is described by the exponential dependence $I=I_{0}\exp(qV/ckT)$ at low voltages (no higher than 0.4 V) and by the power dependence $J\sim V^{\alpha}$, where the exponent $\alpha$ varies with increasing voltage at high voltages ($V>$ 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.
Received: 31.03.2015 Accepted: 20.04.2015
Citation:
S. Zaynabidinov, A. S. Saidov, A. Yu. Leiderman, M. U. Kalanov, Sh. N. Usmonov, V. M. Rustamova, A. Boboev, “Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 60–66; Semiconductors, 50:1 (2016), 59–65
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https://www.mathnet.ru/eng/phts6564 https://www.mathnet.ru/eng/phts/v50/i1/p60
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