Research of the dependence of current-voltage characteristics of $p$-Si-$n$-(Si$_2$)$_{1-x-y}$(Ge$_2$)$_{x}$(ZnSe)$_{y}$-structures on temperature

The possibility of growing of the solid solution (Si$_2$)$_{1-x-y}$(Ge$_2$)$_{x}$(ZnSe)$_{y}$ on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - $I\sim V$, exponential one - $I\sim exp(qV/ckT)$, and the third one with cubic dependence - $I\sim V^{3}$ that at increasing temperature is replaced by the weaker dependences - $I\sim V^{2,8}$, $I\sim V^{2,5}$ and $I\sim V^{2,3}$ at temperatures of $360$, $390$ and $420$ K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processes in these materials.