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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova, P. N. Kustov, V. V. Yaroshenko, Yu. V. Mikhailova, A. S. Gudovskikh, I. S. Mukhin, D. A. Zuev, “Resonant hybrid metal␓dielectric nanostructures for local color generation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:4 (2022), 213–217  ; JETP Letters, 115:4 (2022), 186–189 |
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2021 |
| 2. |
D. A. Kudriashov, A. A. Maksimova, E. A. Vyacheslavova, A. V. Uvarov, I. A. Morozov, A. I. Baranov, A. O. Monastyrenko, A. S. Gudovskikh, “Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364  ; Semiconductors, 55:4 (2021), 410–414 |
| 3. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, A. O. Monastyrenko, “Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 31–33 |
| 4. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, K. Yu. Shugurov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 47–50 |
| 5. |
A. I. Baranov, D. A. Kudriashov, A. V. Uvarov, I. A. Morozov, A. A. Maksimova, E. A. Vyacheslavova, A. S. Gudovskikh, “Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 24–27 ; Tech. Phys. Lett., 47:11 (2021), 785–788 |
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| 6. |
A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, N. A. Kalyuzhnyy, D. A. Kudriashov, A. A. Maksimova, I. A. Morozov, S. A. Mintairov, R. A. Salii, A. S. Gudovskikh, “Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54 ; Tech. Phys. Lett., 47:10 (2021), 730–733 |
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| 7. |
A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021), 49–51 ; Tech. Phys. Lett., 47:1 (2021), 96–98 |
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2020 |
| 8. |
D. A. Kudriashov, A. S. Gudovskikh, A. A. Maksimova, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 37–40 ; Tech. Phys. Lett., 46:12 (2020), 1245–1248 |
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2019 |
| 9. |
A. V. Uvarov, K. S. Zelentsov, A. S. Gudovskikh, “Effect of thermal annealing on the photovoltaic properties of GaP/Si heterostructures fabricated by plasma-enhanced atomic layer deposition”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1095–1102 ; Semiconductors, 53:8 (2019), 1075–1081 |
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2018 |
| 10. |
D. V. Permyakov, I. S. Sinev, S. K. Sychev, A. S. Gudovskikh, A. A. Bogdanov, A. V. Lavrinenko, A. K. Samusev, “Visualization of isofrequency contours of strongly localized waveguide modes in planar dielectric structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018), 12–17 ; JETP Letters, 107:1 (2018), 10–14   |
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| 11. |
D. A. Kudriashov, A. S. Gudovskikh, A. I. Baranov, “Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1668–1674 ; Semiconductors, 52:13 (2018), 1775–1781 |
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| 12. |
V. F. Agekyan, E. V. Borisov, A. S. Gudovskikh, D. A. Kudriashov, A. O. Monastyrenko, A. Yu. Serov, N. G. Filosofov, “Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 402–408 ; Semiconductors, 52:3 (2018), 383–389 |
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2017 |
| 13. |
D. A. Kudriashov, A. S. Gudovskikh, A. V. Babichev, A. V. Filimonov, A. M. Mozharov, V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov, “Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 111–115 ; Semiconductors, 51:1 (2017), 110–114 |
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| 14. |
S. B. Musalinov, A. P. Anzulevich, I. V. Bychkov, A. S. Gudovskikh, M. Z. Shvarts, “Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 89–93 ; Semiconductors, 51:1 (2017), 88–92 |
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2016 |
| 15. |
A. M. Mozharov, D. A. Kudriashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin, “Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1543–1547 ; Semiconductors, 50:11 (2016), 1521–1525 |
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| 16. |
E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667 ; Semiconductors, 50:5 (2016), 652–655 |
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