Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction

The possibility of using admittance spectroscopy to characterization the quality of ITO/MoO$_x$/$n$-Si structures is shown. It has been demonstrated that magnetron sputtering of ITO layer at room temperature leads to radiation defects formation in the near-surface region of Si near the MoO$_x$/Si interface with a depth of 0.13 and 0.26 eV below the conduction band with a capture cross-sectional area of (1–5) $\cdot$ 10$^{-19}$ and (5–10) $\cdot$ 10$^{-19}$ cm$^{-2}$, respectively. An increase in the deposition temperature of the ITO layer to 130$^{\circ}$C allows to reduce the concentration below the sensitivity leading to a significant improvement of solar cells characteristic.