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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 2, Pages 49–51
DOI: https://doi.org/10.21883/PJTF.2021.02.50547.18556 (Mi pjtf4888) 		 
This article is cited in 5 scientific papers (total in 5 papers)

A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition

A. S. Gudovskikhab, D. A. Kudriashova, A. I. Baranova, A. V. Uvarova, I. A. Morozova

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (298 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2021.02.50547.18556
Abstract: For the first time, the possibility of forming boron phosphide layers by plasma-enhanced atomic-layer deposition at a temperature of 250$^{\circ}$C has been shown. Also the possibility of their use as a selective hole contact to silicon for solar cell application has been experimentally demonstrated.
Keywords: boron phosphide, silicon, selective contact, solar cell.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0004
This work was supported in part by the Ministry of Science and Higher Education of the Russian Federation, state assignment no. 0791-2020-0004.
Received: 23.09.2020
Revised: 13.10.2020
Accepted: 13.10.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 1, Pages 96–98
DOI: https://doi.org/10.1134/S1063785021010211
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Gudovskikh, D. A. Kudriashov, A. I. Baranov, A. V. Uvarov, I. A. Morozov, “A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021), 49–51; Tech. Phys. Lett., 47:1 (2021), 96–98
Citation in format AMSBIB
\Bibitem{GudKudBar21}
\by A.~S.~Gudovskikh, D.~A.~Kudriashov, A.~I.~Baranov, A.~V.~Uvarov, I.~A.~Morozov
\paper A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 2
\pages 49--51
\mathnet{http://mi.mathnet.ru/pjtf4888}
\crossref{https://doi.org/10.21883/PJTF.2021.02.50547.18556}
\elib{https://elibrary.ru/item.asp?id=44860849}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 1
\pages 96--98
\crossref{https://doi.org/10.1134/S1063785021010211}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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