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This article is cited in 13 scientific papers (total in 13 papers)
Manufacturing, processing, testing of materials and structures
Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies
D. A. Kudriashova, A. S. Gudovskikhab, A. V. Babichevcde, A. V. Filimonovc, A. M. Mozharova, V. F. Agekyanf, E. V. Borisovf, A. Yu. Serovf, N. G. Filosofovf a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Connector Optics LLC, St. Petersburg
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
e Ioffe Institute, St. Petersburg
f Saint Petersburg State University
Abstract:
Nanoscale copper (I) oxide layers are formed by magnetron-assisted sputtering onto glassy and silicon substrates in an oxygen-free environment at room temperature, and the structural and optical properties of the layers are studied. It is shown that copper oxide formed on a silicon substrate exhibits a lower degree of disorder than that formed on a glassy substrate, which is supported by the observation of a higher intensity and a smaller half-width of reflections in the diffraction pattern. The highest intensity of reflections in the diffraction pattern is observed for Cu$_2$O films grown on silicon at a magnetron power of 150 W. The absorption and transmittance spectra of these Cu$_2$O films are in agreement with the well-known spectra of bulk crystals. In the Raman spectra of the films, phonons inherent in the crystal lattice of cubic Cu$_2$O crystals are identified.
Received: 10.05.2016 Accepted: 18.05.2016
Citation:
D. A. Kudriashov, A. S. Gudovskikh, A. V. Babichev, A. V. Filimonov, A. M. Mozharov, V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov, “Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 111–115; Semiconductors, 51:1 (2017), 110–114
Linking options:
https://www.mathnet.ru/eng/phts6267 https://www.mathnet.ru/eng/phts/v51/i1/p111
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