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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. V. Ryabtsev, D. A. A. Ghareeb, S. Yu. Turishchev, L. A. Obvintseva, A. V. Shaposhnik, È. P. Domashevskaya, “Structural and gas-sensitive characteristics of thin semiconductor PdO films of various thicknesses during ozone detection”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1034–1039   |
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2019 |
| 2. |
È. P. Domashevskaya, S. A. Ivkov, A. V. Sitnikov, O. V. Stognei, A. T. Kozakov, A. V. Nikol'skii, “The influence of relative content of a metal component in a dielectric matrix on the formation and dimensions of cobalt nanocrystallites in Co$_{x}$(MgF$_{2}$)$_{100-x}$ film composites”, Fizika Tverdogo Tela, 61:2 (2019), 211–219 ; Phys. Solid State, 61:2 (2019), 71–79 |
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| 3. |
È. P. Domashevskaya, D. L. Goloshchapov, Al Khailani Hasan Ismail Dambos, E. V. Rudnev, M. V. Grechkina, S. V. Ryabtsev, “On the morphology and optical properties of molybdenum disulfide nanostructures from a monomolecular layer to a fractal-like substructure”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 940–946 ; Semiconductors, 53:7 (2019), 923–929 |
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2018 |
| 4. |
V. A. Terekhov, D. S. Usol'tseva, O. V. Serbin, I. E. Zanin, T. V. Kulikova, D. N. Nesterov, K. A. Barkov, A. V. Sitnikov, S. K. Lazaruk, È. P. Domashevskaya, “Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering”, Fizika Tverdogo Tela, 60:5 (2018), 1005–1011 ; Phys. Solid State, 60:5 (2018), 1021–1028 |
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| 5. |
D. L. Goloshchapov, P. V. Seredin, D. A. Minakov, È. P. Domashevskaya, “Photoluminescence properties of nanoporous nanocrystalline carbonate-substituted hydroxyapatite”, Optics and Spectroscopy, 124:2 (2018), 191–196 ; Optics and Spectroscopy, 124:2 (2018), 187–192 |
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2017 |
| 6. |
A. S. Len'shin, V. M. Kashkarov, È. P. Domashevskaya, P. V. Seredin, A. N. Beltyukov, F. Z. Gilmutdinov, “Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering”, Fizika Tverdogo Tela, 59:4 (2017), 773–782 ; Phys. Solid State, 59:4 (2017), 791–800 |
| 7. |
È. P. Domashevskaya, A. A. Guda, A. V. Chernyshev, V. G. Sitnikov, “Specific features of the atomic structure of metallic layers of multilayered (CoFeZr/SiO$_{2}$)$_{32}$ and (CoFeZr/$a$-Si)$_{40}$ nanostructures with different interlayers”, Fizika Tverdogo Tela, 59:2 (2017), 373–378 ; Phys. Solid State, 59:2 (2017), 385–391 |
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| 8. |
È. P. Domashevskaya, N. S. Builov, V. A. Terekhov, K. A. Barkov, V. G. Sitnikov, “Electronic structure and phase composition of dielectric interlayers in multilayer amorphous nanostructure [(CoFeB)$_{60}$C$_{40}$/SiO$_{2}$]$_{200}$”, Fizika Tverdogo Tela, 59:1 (2017), 161–166 ; Phys. Solid State, 59:1 (2017), 168–173 |
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| 9. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
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2016 |
| 10. |
M. D. Manyakin, S. I. Kurganskii, O. I. Dubrovskii, O. A. Chuvenkova, È. P. Domashevskaya, S. Yu. Turishchev, “Ab initio calculation and synchrotron X-ray spectroscopy investigations of tin oxides near the Sn $L_{3}$”, Fizika Tverdogo Tela, 58:12 (2016), 2294–2298 ; Phys. Solid State, 58:12 (2016), 2379–2384 |
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| 11. |
È. P. Domashevskaya, V. A. Terekhov, S. Yu. Turishchev, D. E. Spirin, A. V. Chernyshev, Yu. E. Kalinin, A. V. Sitnikov, “Interatomic interactions at interfaces of multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/Si$_{2}$)$_{32}$”, Fizika Tverdogo Tela, 58:5 (2016), 991–999 ; Phys. Solid State, 58:5 (2016), 1024–1033 |
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| 12. |
È. P. Domashevskaya, E. A. Mikhailyuk, T. V. Prokopova, N. N. Bezryadin, “Deep centers at the interface in In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$/InAs and In$_{2}$Te$_{3}$/InAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 313–317 ; Semiconductors, 50:3 (2016), 309–313 |
| 13. |
V. A. Terekhov, E. I. Terukov, Yu. K. Undalov, E. V. Parinova, D. E. Spirin, P. V. Seredin, D. A. Minakov, È. P. Domashevskaya, “Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 212–217 ; Semiconductors, 50:2 (2016), 212–216 |
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| 14. |
S. V. Ryabtsev, O. A. Chuvenkova, S. V. Kannykin, A. E. Popov, N. S. Ryabtseva, S. S. Voischev, S. Yu. Turishchev, È. P. Domashevskaya, “On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 180–184 ; Semiconductors, 50:2 (2016), 180–184 |
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1991 |
| 15. |
L. A. Balagurov, N. Yu. Karpova, V. A. Terekhov, S. N. Trostyanskii, È. P. Domashevskaya, “Ultrasoft X-ray spectroscopic study of the localized $\mathrm{D}$-state energy spectrum in the bulk and on the surface of $a$-$\mathrm{Si}:\mathrm{H}$”, Fizika Tverdogo Tela, 33:10 (1991), 3033–3038 |
| 16. |
O. A. Golikova, È. P. Domashevskaya, M. M. Mezdrogina, K. L. Sorokina, V. A. Terekhov, S. N. Trostyanskii, “Плотность состояний хвоста валентной зоны и фотопроводимость
аморфного гидрированного кремния”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1448–1450 |
| 17. |
È. P. Domashevskaya, E. N. Nevryueva, G. G. Grushka, N. P. Govaleshko, A. S. Baev, V. A. Terekhov, “Влияние стехиометрических вакансий на поведение потолка валентной
зоны в твердых растворах (In$_{2}$Te$_{3}$)$_{x}{-}$(HgTe)$_{1-x}$”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 893–897 |
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1989 |
| 18. |
O. A. Golikova, È. P. Domashevskaya, M. M. Kazanin, V. Kh. Kudoyarova, M. M. Mezdrogina, K. L. Sorokina, V. A. Terekhov, S. N. Trostyanskii, “Структурная сетка, уровень Ферми и плотность состояний аморфного
кремния”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 450–455 |
| 19. |
V. A. Terekhov, V. M. Kashkarov, È. P. Domashevskaya, N. N. Arsentev, T. M. Ivanova, “Электронное строение валентной зоны твердых растворов
Al$_{y}$Ga$_{1-y}$As и GaAs$_{1-x}$P$_{x}$
по данным рентгеновской спектроскопии”, Fizika i Tekhnika Poluprovodnikov, 23:2 (1989), 268–273 |
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1988 |
| 20. |
O. A. Golikova, È. P. Domashevskaya, A. Tadzhiev, V. A. Terekhov, “Electron state density of $\mathrm{MB}_{66}$ compounds”, Fizika Tverdogo Tela, 30:3 (1988), 899–901 |
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1987 |
| 21. |
V. V. Kukuev, E. A. Tutov, È. P. Domashevskaya, M. V. Yanovskaya, V. E. Obvintseva, Yu. N. Venevtsev, “DENSITY CONTROL OF THE EFFICIENT SURFACE-CHARGE IN THE MDS STRUCTURE
WITH A TUNGSTEN TRIOXIDE FILM”, Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987), 1957–1961 |
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1986 |
| 22. |
Yu. K. Timoshenko, È. P. Domashevskaya, A. N. Latyshev, “Local electronic states of the iodine center in $\mathrm{AgCl}$”, Fizika Tverdogo Tela, 28:7 (1986), 2191–2193 |
| 23. |
V. A. Terekhov, V. M. Kashkarov, Y. A. Teterin, I. M. Rarenko, È. P. Domashevskaya, “Effect of $5d$-Electrons of Mercury on the Collapse of the Forbidden Band in Cd$_{x}$Hg$_{1-x}$Te Solid Solutions”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1658–1661 |
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1985 |
| 24. |
S. V. Vlasov, È. P. Domashevskaya, S. I. Kurganskii, G. P. Nizhnikova, O. V. Farberovich, “Valence band structure of $\mathrm{SmB}_{6}$ compound with intermediate valence”, Fizika Tverdogo Tela, 27:7 (1985), 2173–2175 |
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1984 |
| 25. |
O. V. Farberovich, G. P. Nizhnikova, S. V. Vlasov, È. P. Domashevskaya, “Self-consistent relativistic band structure of $\mathrm{TmS}$ in local density functional approximation”, Fizika Tverdogo Tela, 26:2 (1984), 554–556 |
| 26. |
V. A. Terekhov, O. A. Golikova, È. P. Domashevskaya, S. N. Trostyanskii, M. M. Mezdrogina, K. L. Sorokina, “Плотность состояний и фотопроводимость аморфного кремния”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1897–1899 |
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1983 |
| 27. |
V. A. Terekhov, V. M. Kashkarov, V. V. Gorbachev, Yu. A. Teterin, È. P. Domashevskaya, “Electronic structure of copper chalcogenides using X-ray spectral and X-ray photoelectron data”, Fizika Tverdogo Tela, 25:8 (1983), 2482–2484 |
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1964 |
| 28. |
Ya. A. Ugai, È. P. Domashevskaya, “On the nature of the chemical bond in semiconducting $\mathrm{A}^{\mathrm{III}}\mathrm{B}^{\mathrm{V}}$ compounds”, Dokl. Akad. Nauk SSSR, 156:2 (1964), 430–433 |
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