This article is cited in 1 scientific paper (total in 1 paper)
Surface physics, thin films
Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering
Abstract:
The peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al$_{0.75}$Si$_{0.25}$ composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al$_3$Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al$_3$Si of the Pm3m cubic system with the primitive cell parameter $a$ = 4.085 $\mathring{\mathrm{A}}$. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm$^2$ gives rise to the partial decomposition of the Al$_3$Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.
Citation:
V. A. Terekhov, D. S. Usol'tseva, O. V. Serbin, I. E. Zanin, T. V. Kulikova, D. N. Nesterov, K. A. Barkov, A. V. Sitnikov, S. K. Lazaruk, È. P. Domashevskaya, “Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering”, Fizika Tverdogo Tela, 60:5 (2018), 1005–1011; Phys. Solid State, 60:5 (2018), 1021–1028
\Bibitem{TerUsoSer18}
\by V.~A.~Terekhov, D.~S.~Usol'tseva, O.~V.~Serbin, I.~E.~Zanin, T.~V.~Kulikova, D.~N.~Nesterov, K.~A.~Barkov, A.~V.~Sitnikov, S.~K.~Lazaruk, \`E.~P.~Domashevskaya
\paper Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 5
\pages 1005--1011
\mathnet{http://mi.mathnet.ru/ftt9215}
\crossref{https://doi.org/10.21883/FTT.2018.05.45804.193}
\elib{https://elibrary.ru/item.asp?id=32739896}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 5
\pages 1021--1028
\crossref{https://doi.org/10.1134/S1063783418050311}
Linking options:
https://www.mathnet.ru/eng/ftt9215
https://www.mathnet.ru/eng/ftt/v60/i5/p1005
This publication is cited in the following 1 articles:
V.A. Terekhov, E.P. Domashevskaya, S.I. Kurganskii, D.N. Nesterov, K.A. Barkov, V.R. Radina, K.E. Velichko, I.E. Zanin, A.V. Sitnikov, B.L. Agapov, “Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data”, Thin Solid Films, 772 (2023), 139816