|
|
|
Publications in Math-Net.Ru |
Citations |
|
2000 |
| 1. |
O. N. Gorshkov, E. M. Dianov, N. B. Zvonkov, G. A. Maksimov, V. N. Protopopov, Yu. I. Chigirinskii, “Luminescence of Cr<sup>4+</sup>:Ca<sub>2</sub>GeO<sub>4</sub> films in the near infrared region”, Kvantovaya Elektronika, 30:3 (2000), 261–262  [Quantum Electron., 30:3 (2000), 261–262  ] |
2
|
|
1999 |
| 2. |
N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 26:3 (1999), 217–218 [Quantum Electron., 29:3 (1999), 217–218 ] |
9
|
|
1998 |
| 3. |
N. B. Zvonkov, B. N. Zvonkov, A. V. Ershov, E. A. Uskova, G. A. Maksimov, “Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate”, Kvantovaya Elektronika, 25:7 (1998), 622–624 [Quantum Electron., 28:7 (1998), 605–607 ] |
10
|
|
1997 |
| 4. |
I. A. Avrutskiĭ, E. M. Dianov, B. N. Zvonkov, N. B. Zvonkov, I. G. Malkina, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm”, Kvantovaya Elektronika, 24:2 (1997), 123–126 [Quantum Electron., 27:2 (1997), 118–121 ] |
2
|
|
1996 |
| 5. |
I. A. Avrutskiĭ, S. A. Akhlestina, E. M. Dianov, N. B. Zvonkov, E. R. Lin'kova, G. A. Maksimov, “Single-mode emission from injection lasers with a trapezoidal active region”, Kvantovaya Elektronika, 23:8 (1996), 701–703 [Quantum Electron., 26:8 (1996), 682–684 ] |
1
|
|
1994 |
| 6. |
I. A. Avrutskiĭ, L. M. Batukova, E. M. Dianov, B. N. Zvonkov, N. B. Zvonkov, G. A. Maksimov, I. G. Malkina, L. V. Medvedeva, T. N. Yan'kova, “Lasers emitting at a wavelength of 0.98 μm, constructed from InGaP/GaAs heterostructures grown by MOCVD method”, Kvantovaya Elektronika, 21:10 (1994), 921–924 [Quantum Electron., 24:10 (1994), 859–862 ] |
4
|
|
| Organisations |
|
| |
|
|
Contact us: