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Kvantovaya Elektronika, 1996, Volume 23, Number 8, Pages 701–703 (Mi qe754)  

This article is cited in 1 scientific paper (total in 1 paper)

Lasers

Single-mode emission from injection lasers with a trapezoidal active region

I. A. Avrutskiĭa, S. A. Akhlestinab, E. M. Dianova, N. B. Zvonkovb, E. R. Lin'kovab, G. A. Maksimovb

a Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (144 kB) Citations (1)
Abstract: Semiconductor injection lasers with a trapezoidal active region were made and investigated. The results demonstrated that this configuration of the active region could result in the formation of a narrow angular distribution of the laser radiation.
Received: 01.01.1996
English version:
Quantum Electronics, 1996, Volume 26, Issue 8, Pages 682–684
DOI: https://doi.org/10.1070/QE1996v026n08ABEH000754
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf
Language: Russian


Citation: I. A. Avrutskiĭ, S. A. Akhlestina, E. M. Dianov, N. B. Zvonkov, E. R. Lin'kova, G. A. Maksimov, “Single-mode emission from injection lasers with a trapezoidal active region”, Kvantovaya Elektronika, 23:8 (1996), 701–703 [Quantum Electron., 26:8 (1996), 682–684]
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  • https://www.mathnet.ru/eng/qe754
  • https://www.mathnet.ru/eng/qe/v23/i8/p701
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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