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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
A. N. Aleshin, P. P. Shirinkin, A. K. Khripunov, N. N. Saprykina, I. P. Shcherbakov, I. N. Trapeznikova, P. A. Aleshin, V. N. Petrov, “Photoluminescence and photoconductivity of lead halide perovskite films modified with mixed cellulose esters”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 987 ; Tech. Phys., 66:7 (2021), 827–834 |
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2019 |
2. |
Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova, “Formation of $ncl$-Si in the amorphous matrix $a$-SiO$_{x}$ : H located near the anode and on the cathode, using a time-modulated DC plasma with the (SiH$_4$–Ar–O$_{2}$) gas phase ($C_{\mathrm{O}_2}$ = 21.5 мол%)”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1547–1556 ; Semiconductors, 53:11 (2019), 1514–1523 |
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S. N. Abolmasov, A. S. Abramov, A. V. Semenov, I. S. Shahray, E. I. Terukov, E. V. Malchukova, I. N. Trapeznikova, “Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1140 ; Semiconductors, 53:8 (2019), 1114–1119 |
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4. |
V. I. Ivanov-Omskii, K. J. Mynbaev, I. N. Trapeznikova, D. A. Andryushchenko, N. L. Bazhenov, N. N. Mikhailov, V. S. Varavin, V. G. Remesnik, S. A. Dvoretskii, M. V. Yakushev, “An optical study of disordering in cadmium mercury telluride solid solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 24–27 ; Tech. Phys. Lett., 45:6 (2019), 553–556 |
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2018 |
5. |
Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova, “Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1137–1144 ; Semiconductors, 52:10 (2018), 1255–1263 |
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2017 |
6. |
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films”, Fizika Tverdogo Tela, 59:12 (2017), 2457–2461 ; Phys. Solid State, 59:12 (2017), 2486–2490 |
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7. |
S. E. Nikitin, A. V. Nashchekin, E. E. Terukova, I. N. Trapeznikova, A. V. Bobyl', V. N. Verbitskii, “Surface texture of single-crystal silicon oxidized under a thin V$_{2}$O$_{5}$ layer”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 105–110 ; Semiconductors, 51:1 (2017), 104–109 |
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2016 |
8. |
A. N. Aleshin, I. P. Shcherbakov, I. N. Trapeznikova, V. N. Petrov, “Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles”, Fizika Tverdogo Tela, 58:9 (2016), 1818–1825 ; Phys. Solid State, 58:9 (2016), 1882–1890 |
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9. |
Yu. K. Undalov, E. I. Terukov, O. B. Gusev, I. N. Trapeznikova, “On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 538–548 ; Semiconductors, 50:4 (2016), 530–540 |
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2011 |
10. |
O. B. Gusev, J. S. Vainshtein, Yu. K. Undalov, O. S. Yeltsina, I. N. Trapeznikova, E. I. Terukov, O. M. Sreseli, “Luminescence of amorphous silicon nanoclusters”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011), 402–405 ; JETP Letters, 94:5 (2011), 370–373 |
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1992 |
11. |
O. I. Kon'kov, I. N. Trapeznikova, M. P. Vlasenko, E. I. Terukov, G. N. Violina, “Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$”, Fizika Tverdogo Tela, 34:1 (1992), 326–328 |
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