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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Page 1140
DOI: https://doi.org/10.21883/FTP.2019.08.48008.9113 (Mi phts5442) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass

S. N. Abolmasova, A. S. Abramovab, A. V. Semenova, I. S. Shahrayc, E. I. Terukovabd, E. V. Malchukovab, I. N. Trapeznikovab

a R&D Center of Thin Film Technologies in Energetics, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
c Hevel LLC, Moscow, Russia
d St. Petersburg Electrotechnical University, St. Petersburg, Russia
Full-text PDF (31 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.08.48008.9113
Abstract: Attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23
Received: 01.03.2019
Revised: 01.03.2019
Accepted: 25.03.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1114–1119
DOI: https://doi.org/10.1134/S1063782619080244
Bibliographic databases:
Document Type: Article
Language: English
Citation: S. N. Abolmasov, A. S. Abramov, A. V. Semenov, I. S. Shahray, E. I. Terukov, E. V. Malchukova, I. N. Trapeznikova, “Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1140; Semiconductors, 53:8 (2019), 1114–1119
Citation in format AMSBIB
\Bibitem{AboAbrSem19}
\by S.~N.~Abolmasov, A.~S.~Abramov, A.~V.~Semenov, I.~S.~Shahray, E.~I.~Terukov, E.~V.~Malchukova, I.~N.~Trapeznikova
\paper Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1140
\mathnet{http://mi.mathnet.ru/phts5442}
\crossref{https://doi.org/10.21883/FTP.2019.08.48008.9113}
\elib{https://elibrary.ru/item.asp?id=41129847}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1114--1119
\crossref{https://doi.org/10.1134/S1063782619080244}
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  • https://www.mathnet.ru/eng/phts/v53/i8/p1140
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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