Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)

The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous $a$-SiO$_{x}$:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consists in repeated ($n$ = 180) switching off and on of the magnetron magnet coil with various time combinations, $t_{\operatorname{off}}$ = 1, 2, 5, 10, 15 s and $t_{\operatorname{on}}$ = 5, 10, 15 s, respectively, at a fixed oxygen concentration (C$_{\mathrm{O}_2}$ = 15.5 mol %) in a (SiH$_{4}$ + Ar + О$_{2}$) gas mixture. The positive effect of self-induction on the formation of both the amorphous matrix and silicon nanoclusters is confirmed. The largest values of $x$ in $a$-SiO$_{x}$:H and photoluminescence intensity are observed in the case of the combination of prolonged plasma residence in the working state ($t_{\operatorname{on}}$ = 10–15 s) and the maximum magnetic-field strength. The effect of $t_{\operatorname{off}}$ on the processes of the formation of both the $a$-SiO$_{x}$:H matrix and silicon nanoclusters is also noted.