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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
E. M. Trukhanov, S. A. Teys, “An unusual mechanism of misfit stress relaxation in thin nanofilms”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 28–31   ; Tech. Phys. Lett., 45:11 (2019), 1144–1147 |
2
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2018 |
| 2. |
V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz, “Formation of a graphene-like SiN layer on the surface Si(111)”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1407–1413 ; Semiconductors, 52:12 (2018), 1511–1517 |
5
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2017 |
| 3. |
S. A. Teys, “Different STM images of the superstructure on a clean $\mathrm{Si(133)}$-$6\times2$ surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017), 469–476 ; JETP Letters, 105:8 (2017), 477–483   |
5
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2012 |
| 4. |
S. A. Teys, “Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:12 (2012), 884–893 ; JETP Letters, 96:12 (2012), 794–802 |
12
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2010 |
| 5. |
S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437 ; JETP Letters, 92:6 (2010), 388–395 |
13
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2004 |
| 6. |
R. A. Zhachuk, S. A. Teys, B. Z. Olshanetskii, “Formation of silver nanodots and nanowires on a Si(557) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:8 (2004), 467–469 ; JETP Letters, 79:8 (2004), 381–382 |
15
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2002 |
| 7. |
A. B. Talochkin, S. A. Teys, “Optical phonons in Ge quantum dots obtained on Si(111)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:6 (2002), 314–317 ; JETP Letters, 75:6 (2002), 264–267 |
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