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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 6, Pages 314–317 (Mi jetpl3059)  
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Optical phonons in Ge quantum dots obtained on Si(111)

A. B. Talochkin, S. A. Teys

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (225 kB) Citations (7)
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Abstract: The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is observed. It is shown that phonon frequencies are adequately described in terms of the elastic properties and the dispersion of the optical phonons of bulk Ge. The strain experienced by the Ge quantum dots is estimated.
Received: 06.02.2002
English version:
Journal of Experimental and Theoretical Physics Letters, 2002, Volume 75, Issue 6, Pages 264–267
DOI: https://doi.org/10.1134/1.1481460
Bibliographic databases:
Document Type: Article
PACS: 72.15.Rn
Language: Russian
Citation: A. B. Talochkin, S. A. Teys, “Optical phonons in Ge quantum dots obtained on Si(111)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:6 (2002), 314–317; JETP Letters, 75:6 (2002), 264–267
Citation in format AMSBIB
\Bibitem{TalTey02}
\by A.~B.~Talochkin, S.~A.~Teys
\paper Optical phonons in Ge quantum dots obtained on Si(111)
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2002
\vol 75
\issue 6
\pages 314--317
\mathnet{http://mi.mathnet.ru/jetpl3059}
\transl
\jour JETP Letters
\yr 2002
\vol 75
\issue 6
\pages 264--267
\crossref{https://doi.org/10.1134/1.1481460}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-0042871611}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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