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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 75, Issue 6, Pages 314–317
(Mi jetpl3059)
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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Optical phonons in Ge quantum dots obtained on Si(111)
A. B. Talochkin, S. A. Teys Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is observed. It is shown that phonon frequencies are adequately described in terms of the elastic properties and the dispersion of the optical phonons of bulk Ge. The strain experienced by the Ge quantum dots is estimated.
Received: 06.02.2002
Citation:
A. B. Talochkin, S. A. Teys, “Optical phonons in Ge quantum dots obtained on Si(111)”, Pis'ma v Zh. Èksper. Teoret. Fiz., 75:6 (2002), 314–317; JETP Letters, 75:6 (2002), 264–267
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https://www.mathnet.ru/eng/jetpl3059 https://www.mathnet.ru/eng/jetpl/v75/i6/p314
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