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This article is cited in 2 scientific papers (total in 2 papers)
An unusual mechanism of misfit stress relaxation in thin nanofilms
E. M. Trukhanov, S. A. Teys Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The 7 $\times$ 7 $\to$ 5 $\times$ 5 phase transition in a Ge film on Si(111) substrate involves partial compensation of compressive stresses in the interface between volume (bulk) crystal and superstructure by means of tensile straining of loose layers of the surface phase.
Keywords:
germanium, relaxation mechanism, superstructural transition, mass transfer.
Received: 24.05.2019 Revised: 15.07.2019 Accepted: 05.08.2019
Citation:
E. M. Trukhanov, S. A. Teys, “An unusual mechanism of misfit stress relaxation in thin nanofilms”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 28–31; Tech. Phys. Lett., 45:11 (2019), 1144–1147
Linking options:
https://www.mathnet.ru/eng/pjtf5264 https://www.mathnet.ru/eng/pjtf/v45/i22/p28
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Abstract page: | 27 | Full-text PDF : | 5 |
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