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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. S. Kyuregyan, “Excitation of copper vapor lasers by storage capacitor direct discharge via high-speed photothyristors”, Optics and Spectroscopy, 126:4 (2019), 471–476   ; Optics and Spectroscopy, 126:4 (2019), 388–393 |
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| 2. |
A. S. Kyuregyan, “High voltage diffused step recovery diodes. II. Theory”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 985–990 ; Semiconductors, 53:7 (2019), 969–974 |
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| 3. |
A. S. Kyuregyan, “High voltage diffused step recovery diodes. I. Numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 978–984 ; Semiconductors, 53:7 (2019), 962–968 |
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| 4. |
A. S. Kyuregyan, “High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions. III. Self-heating effects”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 528–532 ; Semiconductors, 53:4 (2019), 519–523 |
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| 5. |
A. S. Kyuregyan, “Large-amplitude shock electromagnetic wave in a nonlinear transmission line based on a distributed semiconductor diode”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 520–527 ; Semiconductors, 53:4 (2019), 511–518 |
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2018 |
| 6. |
A. S. Kyuregyan, “Optimal doping of diode current interrupters”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 359–365 ; Semiconductors, 52:3 (2018), 341–347 |
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2017 |
| 7. |
A. S. Kyuregyan, “High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: II. Energy efficiency”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1263–1266 ; Semiconductors, 51:9 (2017), 1214–1217 |
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| 8. |
A. S. Kyuregyan, “High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: I. Physics of the switching process”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1257–1262 ; Semiconductors, 51:9 (2017), 1208–1213 |
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2016 |
| 9. |
A. S. Kyuregyan, A. V. Gorbatyuk, B. V. Ivanov, “Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 973–978 ; Semiconductors, 50:7 (2016), 957–962 |
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| 10. |
A. S. Kyuregyan, “On measurements of the electrons and holes impact-ionization coefficients in 4$H$–SiC”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 293–297 ; Semiconductors, 50:3 (2016), 289–294 |
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2007 |
| 11. |
A. S. Kyuregyan, “Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:5 (2007), 360–364 ; JETP Letters, 86:5 (2007), 308–312   |
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1990 |
| 12. |
A. S. Kyuregyan, “Влияние крупномасштабных флуктуаций распределения примесей
на туннелирование и электропоглощение в обратно смещенных $p{-}n$-переходах”, Fizika i Tekhnika Poluprovodnikov, 24:7 (1990), 1162–1168 |
| 13. |
L. A. Kirdyashkina, A. S. Kyuregyan, P. N. Shlygin, S. N. Yurkov, “Ударная ионизация в кремнии, выращенном различными методами”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 560–563 |
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1989 |
| 14. |
A. S. Kyuregyan, S. N. Yurkov, “Напряжение лавинного пробоя $p{-}n$-переходов на основе Si,
Ge, SiC, GaAs, GaP и InP при комнатной температуре”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1819–1827 |
| 15. |
A. S. Kyuregyan, P. N. Shlygin, “Температурная зависимость напряжения лавинного пробоя
$p{-}n$-переходов с глубокими уровнями”, Fizika i Tekhnika Poluprovodnikov, 23:7 (1989), 1164–1172 |
| 16. |
A. S. Kyuregyan, “Прыжковая генерация носителей заряда в истощенных слоях
полупроводников с непрерывным спектром локализованных состояний”, Fizika i Tekhnika Poluprovodnikov, 23:1 (1989), 110–116 |
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1988 |
| 17. |
A. S. Kyuregyan, “Electron distribution function in one-dimensional metals in strong electric fields”, Fizika Tverdogo Tela, 30:1 (1988), 236–238 |
| 18. |
A. S. Kyuregyan, “CROSS TRANSFER OF ELECTRONS AND HOLES UNDER AVALANCHE MULTIPLICATION IN
SEMICONDUCTING DEVICES”, Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988), 172–174 |
| 19. |
A. S. Kyuregyan, “SHOCK IONIZATION AND AVALANCHE MULTIPLICATION IN CLASSICAL
SUPERCONDUCTING SUPERLATTICES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988), 2278–2282 |
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1987 |
| 20. |
A. S. Kyuregyan, “Differential Resistance of $p{-}n$ Junctions with Deep
Levels under Avalanche Breakdown”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 941–944 |
| 21. |
A. S. Kyuregyan, Yu. G. Sorokin, “Static Electric Conductivity of Silicon in a High Electric Field due to Linear Dislocations”, Fizika i Tekhnika Poluprovodnikov, 21:2 (1987), 362–364 |
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1985 |
| 22. |
V. A. Kuz'min, A. S. Kyuregyan, Yu. G. Sorokin, V. V. Fedorov, O. V. Bogorodsky, T. P. Vorontsova, O. S. Zhgutova, V. A. Zlobin, L. A. Kirdyashkina, Yu. M. Loktaev, L. S. Rybachyuk, P. N. Shlygin, “MECHANISMS OF THE BREAKDOWN TENSION REDUCTION IN SILICON HIGH-VOLTAGE
MULTI-LAYERED STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 55:7 (1985), 1419–1425 |
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1987 |
| 23. |
A. S. Kyuregyan, Yu. G. Sorokin, “Correction”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 957 ; Semiconductors, 21:5 (1987), 584 |
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