High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: II. Energy efficiency

The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load $R_L$ is studied for the first time. It is shown that at the given values of the resistive load $R_L$, pulse amplitude $U_R$ and duration $t_R$, there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of $\sim$0.92. All three switch types feature almost the same efficiency at short $t_R$; at longer $t_R$, photothyristors have a noticeable advantage.