High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$–$n$ junctions: I. Physics of the switching process

The switching of high-voltage silicon photodiodes, phototransistors, and photothyristors exposed to picosecond laser pulses quasi-homogeneous over illumination area is numerically simulated for the first time. An analysis of the results makes it possible to obtain “empirical” relations between the main switch parameters (energy of control pulses, light absorbance, and structure area) and the parameters characterizing the switching transition process in a circuit with resistive load. For some of these relations, approximate analytical formulas well describing the simulation results are derived. It is noted that the differences between switching processes in three types of structures appears only at long pulses at the final stage, when the blocking capability of photodiodes and phototransistors is recovered.