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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 9, Pages 1257–1262
DOI: https://doi.org/10.21883/FTP.2017.09.44891.8494
(Mi phts6047)
 

This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$$n$ junctions: I. Physics of the switching process

A. S. Kyuregyan

Russian Electrotechnical Institute Named after V. I. Lenin, Moscow, Russia
Full-text PDF (301 kB) Citations (3)
Abstract: The switching of high-voltage silicon photodiodes, phototransistors, and photothyristors exposed to picosecond laser pulses quasi-homogeneous over illumination area is numerically simulated for the first time. An analysis of the results makes it possible to obtain “empirical” relations between the main switch parameters (energy of control pulses, light absorbance, and structure area) and the parameters characterizing the switching transition process in a circuit with resistive load. For some of these relations, approximate analytical formulas well describing the simulation results are derived. It is noted that the differences between switching processes in three types of structures appears only at long pulses at the final stage, when the blocking capability of photodiodes and phototransistors is recovered.
Received: 21.12.2016
Accepted: 28.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 9, Pages 1208–1213
DOI: https://doi.org/10.1134/S1063782617090123
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Kyuregyan, “High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$$n$ junctions: I. Physics of the switching process”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1257–1262; Semiconductors, 51:9 (2017), 1208–1213
Citation in format AMSBIB
\Bibitem{Kyu17}
\by A.~S.~Kyuregyan
\paper High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with $p$--$n$ junctions: I. Physics of the switching process
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 9
\pages 1257--1262
\mathnet{http://mi.mathnet.ru/phts6047}
\crossref{https://doi.org/10.21883/FTP.2017.09.44891.8494}
\elib{https://elibrary.ru/item.asp?id=29973064}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 9
\pages 1208--1213
\crossref{https://doi.org/10.1134/S1063782617090123}
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  • https://www.mathnet.ru/eng/phts/v51/i9/p1257
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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