Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors

The possibility of optimizing high-voltage hybrid SIT–MOP transistors (HSMTs) by means of a local reduction in lifetime near the anode emitter and/ or by decreasing its injection efficiency by three different methods is studied using two-dimensional numerical simulation. It is shown that all four optimization methods are equivalent from the physical point of view and make it possible to decrease the turn-off energy loss $E_{\operatorname{off}}$ by 30–40%, as in insulated gate bipolar transistors (IGBTs). However, all other conditions being equal, the energy $E_{\operatorname{off}}$ in the HSMT appeared 15–35% lower than in equivalent trench IGBTs.