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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3, Pages 293–297
(Mi phts6506)
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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
On measurements of the electrons and holes impact-ionization coefficients in 4$H$–SiC
A. S. Kyuregyan Russian Electrotechnical Institute Named after V. I. Lenin, Moscow, Russia
Abstract:
All published results of measurements (at 300 K) of the impact ionization coefficients for electrons $\alpha_{n}$ and holes $\alpha_{p}$ in 4$H$–SiC are analyzed. It is shown that the most plausible approximations of dependences of $\alpha_{n,p}$ on electric-field strength $E$ have the usual form $\alpha_{n,p}=a_{n,p}\exp(-E_{n,p}/E)$ at fitting-parameter values of $a_{n}$ = 38.6 $\times$ 10$^{6}$ cm$^{-1}$, $E_{n}$ = 25.6 MV/cm, $a_{p}$ = 5.31 $\times$ 10$^{6}$ cm$^{-1}$, and $E_{p}$ = 13.1 MV/cm. These dependences $\alpha_{n,p}(E)$ are used to calculate the highest field strength $E_b$ and thickness $w_b$ of the space-charge region at the breakdown voltage $U_b$. A number of new formulas for calculating $\alpha_{n,p}(E)$ are obtained from the results of measuring the avalanche-multiplication coefficients and the excess-noise factors under the single-sided illumination of photodiodes with stepped doping.
Keywords:
Breakdown Voltage, Solid State Electron, Thick Substrate, Minority Charge Carrier, Breakdown Criterion.
Received: 16.06.2015 Accepted: 08.07.2015
Citation:
A. S. Kyuregyan, “On measurements of the electrons and holes impact-ionization coefficients in 4$H$–SiC”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 293–297; Semiconductors, 50:3 (2016), 289–294
Linking options:
https://www.mathnet.ru/eng/phts6506 https://www.mathnet.ru/eng/phts/v50/i3/p293
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