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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. S. Ivanov, V. I. Brylevsky, P. B. Rodin, “Wave effects in a coaxial transmission line under subnanosecond switching of a high-voltage diode in the delayed impact-ionization breakdown mode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 32–35   ; Tech. Phys. Lett., 47:9 (2021), 661–664 |
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2020 |
| 2. |
M. S. Ivanov, N. I. Podolska, P. B. Rodin, “Double avalanche injection in diode avalanche sharpeners”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 275–279 ; Semiconductors, 54:3 (2020), 345–349 |
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2019 |
| 3. |
N. I. Podolska, P. B. Rodin, “Subnanosecond avalanche switching simulations of $n^{+}$–$n$–$n^{+}$ silicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 401–406 ; Semiconductors, 53:3 (2019), 379–384 |
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2018 |
| 4. |
V. I. Brylevsky, I. A. Smirnova, N. I. Podolska, Yu. A. Zharova, P. B. Rodin, I. V. Grekhov, “Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 66–73 ; Tech. Phys. Lett., 44:2 (2018), 160–163 |
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2017 |
| 5. |
N. I. Podolska, P. B. Rodin, “Subnanosecond impact-ionization switching of silicon structures without $p$–$n$ junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:11 (2017), 55–62 ; Tech. Phys. Lett., 43:6 (2017), 527–530 |
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2016 |
| 6. |
M. S. Ivanov, P. B. Rodin, P. A. Ivanov, I. V. Grekhov, “Parameters of silicon carbide diode avalanche shapers for the picosecond range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 87–94 ; Tech. Phys. Lett., 42:1 (2016), 43–46 |
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