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This article is cited in 4 scientific papers (total in 4 papers)
Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions
V. I. Brylevsky, I. A. Smirnova, N. I. Podolska, Yu. A. Zharova, P. B. Rodin, I. V. Grekhov Ioffe Institute, St. Petersburg
Abstract:
We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without $p$–$n$ junctions when subnanosecond high-voltage pulses are applied. Silicon $n^{+}$–$n$–$n^{+}$ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased $p^{+}$–$n$–$n^{+}$ diode structures. Experimental data are compared to the results of numerical simulations.
Received: 18.10.2017
Citation:
V. I. Brylevsky, I. A. Smirnova, N. I. Podolska, Yu. A. Zharova, P. B. Rodin, I. V. Grekhov, “Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without $p$–$n$ junctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 66–73; Tech. Phys. Lett., 44:2 (2018), 160–163
Linking options:
https://www.mathnet.ru/eng/pjtf5883 https://www.mathnet.ru/eng/pjtf/v44/i4/p66
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Abstract page: | 37 | Full-text PDF : | 9 |
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