Subnanosecond impact-ionization switching of silicon structures without $p$–$n$ junctions

It is shown that an application of a fast-rising high-voltage pulse to an $n^{+}-n-n^{+}$ silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased $p^{+}-n-n^{+}$ diode structures; however, it is implemented in a structure without $p$–$n$ junctions.