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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 3, Pages 275–279
DOI: https://doi.org/10.21883/FTP.2020.03.49032.9284
(Mi phts5264)
 

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

Double avalanche injection in diode avalanche sharpeners

M. S. Ivanov, N. I. Podolska, P. B. Rodin

Ioffe Institute, St. Petersburg
Full-text PDF (184 kB) Citations (2)
Abstract: Numerical simulations of picosecond-range avalanche sharpening diodes commutating fast-rising high-voltage pulses of submicrosecond duration is performed. It is demonstrated that the maximum duration of the commutated pulse is limited by physical phenomena related to the structure transition to the double avalanche injection mode but not by the drift extraction of nonequilibrium electron-hole plasma. Double avalanche injection is in principle capable of supporting the diode structure in the conducting state after switching. However, negative differential conductivity that is attributed to the double injection mode cause transverse instability of uniform current flow and isothermal current filamentation.
Keywords: impact ionization, subnanosecond switches, avalanche injection, current instabilities.
Funding agency Grant number
Russian Foundation for Basic Research 17-08-01559
This study was supported by the Russian Foundation for Basic Research, project no. 17-08-01559.
Received: 14.10.2019
Revised: 22.10.2019
Accepted: 22.10.2019
English version:
Semiconductors, 2020, Volume 54, Issue 3, Pages 345–349
DOI: https://doi.org/10.1134/S1063782620030100
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. S. Ivanov, N. I. Podolska, P. B. Rodin, “Double avalanche injection in diode avalanche sharpeners”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 275–279; Semiconductors, 54:3 (2020), 345–349
Citation in format AMSBIB
\Bibitem{IvaPodRod20}
\by M.~S.~Ivanov, N.~I.~Podolska, P.~B.~Rodin
\paper Double avalanche injection in diode avalanche sharpeners
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 3
\pages 275--279
\mathnet{http://mi.mathnet.ru/phts5264}
\crossref{https://doi.org/10.21883/FTP.2020.03.49032.9284}
\elib{https://elibrary.ru/item.asp?id=42776681}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 3
\pages 345--349
\crossref{https://doi.org/10.1134/S1063782620030100}
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  • https://www.mathnet.ru/eng/phts/v54/i3/p275
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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