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Zabegaev, Dmitrii Nikolaevich

Statistics Math-Net.Ru
Total publications: 8
Scientific articles: 8

Number of views:
This page:43
Abstract pages:304
Full texts:129

https://www.mathnet.ru/eng/person182989
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List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2021
1. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Effect of carrier heating by intrinsic stimulated picosecond emission in GaAs on a linear increase at the front and the duration of the spectral component of this emission”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  434–440  mathnet  elib; Semiconductors, 55:5 (2021), 476–481 5
2. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Amplification lengths of spectral components of intrinsic stimulated picosecond emission. Dependence of the characteristic relaxation time of these components on their amplification lengths. Relation between stimulated and spontaneous emission spectra in GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  121–126  mathnet  elib; Semiconductors, 55:2 (2021), 162–167 3
3. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Effect of carrier heating by the GaAs picosecond stimulated emission on duration of emission”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  113–120  mathnet  elib; Semiconductors, 55:2 (2021), 154–161 6
2020
4. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Electron-population Bragg grating induced in an Al$_{x}$Ga$_{1-x}$As–GaAs–Al$_{x}$Ga$_{1-x}$As heterostructure by intrinsic stimulated picosecond emission”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1018–1028  mathnet  elib; Semiconductors, 54:10 (2020), 1205–1214 5
5. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  25–30  mathnet  elib; Semiconductors, 54:1 (2020), 22–27 6
2019
6. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Relation between the relaxation of intrinsic stimulated picosecond emission from GaAs with a characteristic charge-carrier cooling time”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1471–1478  mathnet  elib; Semiconductors, 53:11 (2019), 1431–1438 9
2017
7. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  594–599  mathnet  elib; Semiconductors, 51:5 (2017), 565–570 7
2016
8. N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1333–1342  mathnet  elib; Semiconductors, 50:10 (2016), 1312–1321 3

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