Effect of carrier heating by the GaAs picosecond stimulated emission on duration of emission

The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic carrier cooling time slowed down due to carrier heating by emission. The effect of this time on renormalization of the band gap due to the Coulomb interaction of carriers is also noted. The part of the concept of the picosecond dynamics of the intense stimulated emission of GaAs, which has been obtained to date in our works with co-authors, is given in Conclusions.