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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 5, Pages 594–599
DOI: https://doi.org/10.21883/FTP.2017.05.44412.8353
(Mi phts6151)
 

This article is cited in 7 scientific papers (total in 7 papers)

Electronic properties of semiconductors

Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Full-text PDF (300 kB) Citations (7)
Abstract: The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
Received: 28.09.2016
Accepted: 07.11.2016
English version:
Semiconductors, 2017, Volume 51, Issue 5, Pages 565–570
DOI: https://doi.org/10.1134/S1063782617050025
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 594–599; Semiconductors, 51:5 (2017), 565–570
Citation in format AMSBIB
\Bibitem{AgeBroZab17}
\by N.~N.~Ageeva, I.~L.~Bronevoi, D.~N.~Zabegaev, A.~N.~Krivonosov
\paper Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 5
\pages 594--599
\mathnet{http://mi.mathnet.ru/phts6151}
\crossref{https://doi.org/10.21883/FTP.2017.05.44412.8353}
\elib{https://elibrary.ru/item.asp?id=29404908}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 5
\pages 565--570
\crossref{https://doi.org/10.1134/S1063782617050025}
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  • https://www.mathnet.ru/eng/phts/v51/i5/p594
  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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