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This article is cited in 7 scientific papers (total in 7 papers)
Electronic properties of semiconductors
Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Abstract:
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
Received: 28.09.2016 Accepted: 07.11.2016
Citation:
N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 594–599; Semiconductors, 51:5 (2017), 565–570
Linking options:
https://www.mathnet.ru/eng/phts6151 https://www.mathnet.ru/eng/phts/v51/i5/p594
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Abstract page: | 41 | Full-text PDF : | 12 |
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