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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 1, Pages 25–30
DOI: https://doi.org/10.21883/FTP.2020.01.48764.9209 (Mi phts5295) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Electronic properties of semiconductors

Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Full-text PDF (151 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2020.01.48764.9209
Abstract: During the powerful picosecond optical pumping, intense stimulated picosecond emission arises in a thin GaAs layer. It was found that, firstly, the maximum emission intensity decreases with increasing diameter of the pump beam (the pump energy density is fixed). Secondly, this dependence is anticorrelated with the dependence on the diameter of the characteristic relaxation time of the emission. And this time, in turn, is associated with the characteristic cooling time of charge carriers, which is slowed down due to heating of the carriers by emission. As a result, the autocorrelation indicated in the title is revealed.
Keywords: stimulated picosecond emission, cooling of charge carriers, gain saturation, Beer–Lambert–Bouguer law.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
This study was carried out in the framework of a state assignment.
Received: 10.07.2019
Revised: 05.08.2019
Accepted: 20.08.2019
English version:
Semiconductors, 2020, Volume 54, Issue 1, Pages 22–27
DOI: https://doi.org/10.1134/S1063782620010029
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov, “Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 25–30; Semiconductors, 54:1 (2020), 22–27
Citation in format AMSBIB
\Bibitem{AgeBroZab20}
\by N.~N.~Ageeva, I.~L.~Bronevoi, D.~N.~Zabegaev, A.~N.~Krivonosov
\paper Anticorrelation between the intensity of stimulated picosecond emission in GaAs and the characteristic time of charge-carrier cooling
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 1
\pages 25--30
\mathnet{http://mi.mathnet.ru/phts5295}
\crossref{https://doi.org/10.21883/FTP.2020.01.48764.9209}
\elib{https://elibrary.ru/item.asp?id=42571059}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 1
\pages 22--27
\crossref{https://doi.org/10.1134/S1063782620010029}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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