Effect of carrier heating by intrinsic stimulated picosecond emission in GaAs on a linear increase at the front and the duration of the spectral component of this emission

During high-power optical picosecond pumping of a thin GaAs layer, which is part of the Al$_{x}$Ga$_{1-x}$As-GaAs-Al$_{x}$Ga$_{1-x}$As heterostructure, intense stimulated picosecond emission arises in it. The exponential and then linear gains of the components at the front are determined by analyzing spectral-component pulses measured in real time. In this case, the influence of the heating of charge carriers by emission on the front of the components was found. The dependence of the component duration (FWHM) on the characteristic times of rise at the front and of relaxation at the decay (also slowed down by emission heating of carriers) of the component is determined.