|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
K. D. Moiseev, V. V. Romanov, “Band diagram of the InAs$_{1-y}$Sb$_{y}$/InAsSbP heterojunction in the composition range $y<$ 0.2”, Fizika Tverdogo Tela, 63:4 (2021), 475–482   ; Phys. Solid State, 63:4 (2021), 595–602 |
2
|
| 2. |
A. A. Semakova, V. V. Romanov, N. L. Bazhenov, K. J. Mynbaev, K. D. Moiseev, “Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 277–281 ; Semiconductors, 55:3 (2021), 354–358 |
2
|
|
2020 |
| 3. |
V. V. Romanov, E. V. Ivanov, K. D. Moiseev, “Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure”, Fizika Tverdogo Tela, 62:11 (2020), 1822–1827 ; Phys. Solid State, 62:11 (2020), 2039–2044 |
6
|
| 4. |
V. V. Romanov, E. V. Ivanov, A. A. Pivovarova, K. D. Moiseev, Yu. P. Yakovlev, “Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 202–206 ; Semiconductors, 54:2 (2020), 253–257 |
6
|
|
2019 |
| 5. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m”, Fizika Tverdogo Tela, 61:10 (2019), 1746–1753 ; Phys. Solid State, 61:10 (2019), 1699–1706 |
8
|
| 6. |
V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il'inskaya, Yu. P. Yakovlev, “Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 832–838 ; Semiconductors, 53:6 (2019), 822–827 |
6
|
|
2018 |
| 7. |
V. V. Romanov, È. V. Ivanov, K. D. Moiseev, “Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures”, Fizika Tverdogo Tela, 60:3 (2018), 585–590 ; Phys. Solid State, 60:3 (2018), 592–597 |
3
|
|
2016 |
| 8. |
K. D. Moiseev, V. V. Romanov, Yu. A. Kudriavtsev, “Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy”, Fizika Tverdogo Tela, 58:11 (2016), 2203–2207 ; Phys. Solid State, 58:11 (2016), 2285–2289 |
5
|
| 9. |
V. V. Romanov, P. A. Dementev, K. D. Moiseev, “Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 927–931 ; Semiconductors, 50:7 (2016), 910–914 |
3
|
|
1990 |
| 10. |
N. T. Bagraev, D. M. Daraseliya, D. L. Dzhaparidze, V. V. Romanov, T. I. Sanadze, “Magnetic properties of single crystal $\alpha$-$\mathrm{LiIO}_{3}$ containing rare-earth ions”, Fizika Tverdogo Tela, 32:9 (1990), 2814–2816 |
| 11. |
B. M. Buttaev, A. V. Golubkov, T. B. Zhukova, M. V. Romanova, V. V. Romanov, V. M. Sergeeva, I. A. Smirnov, “$\mathrm{Tm}_{x}\mathrm{S}(0.9<x<1.11)$- a new concentrated Condo system”, Fizika Tverdogo Tela, 32:8 (1990), 2354–2362 |
|
| Organisations |
|
| |
|
|
Contact us: