|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
1. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Registration of terahertz radiation with silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202 |
2
|
2. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Terahertz emission from silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1027–1033 |
3
|
3. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111 ; Semiconductors, 55:2 (2021), 137–145 |
13
|
|
2020 |
4. |
N. T. Bagraev, P. A. Golovin, L. E. Klyachkin, A. M. Malyarenko, A. P. Presnukhina, N. I. Rul', A. S. Reukov, V. S. Khromov, “Terahertz radiation sources and detectors based on optical microcavities embedded in the edge channels of silicon nanosandwiches”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1663–1671 ; Tech. Phys., 65:10 (2020), 1591–1599 |
1
|
5. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, K. B. Taranets, “Terahertz response of biological tissue for diagnostic and treatment in personalized medicine”, Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020), 1502–1505 |
|
2018 |
6. |
Maxim A. Fomin, Andrey L. Chernev, Nicolay T. Bagraev, Leonid E. Klyachkin, Anton K. Emelyanov, Michael V. Dubina, “Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 512 ; Semiconductors, 52:5 (2018), 612–614 |
7. |
N. T. Bagraev, L. E. Klyachkin, V. S. Khromov, A. M. Malyarenko, V. A. Mashkov, T. V. Matveev, V. V. Romanov, N. I. Rul, K. B. Taranets, “High temperature quantum kinetic effects in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473 ; Semiconductors, 52:4 (2018), 478–484 |
2
|
|
2016 |
8. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1353–1357 ; Semiconductors, 50:10 (2016), 1333–1337 |
3
|
9. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1230–1237 ; Semiconductors, 50:9 (2016), 1208–1215 |
5
|
10. |
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, “Room temperature de Haas–van Alphen effect in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054 ; Semiconductors, 50:8 (2016), 1025–1033 |
20
|
11. |
N. T. Bagraev, E. I. Chaikina, E. Yu. Danilovskii, D. S. Gets, L. E. Klyachkin, T. V. L'vova, A. M. Malyarenko, “Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 474–484 ; Semiconductors, 50:4 (2016), 466–477 |
1
|
|
1992 |
12. |
R. M. Amalskaya, N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “Геттерирование в кремнии в условиях генерации вакансий”, Fizika i Tekhnika Poluprovodnikov, 26:6 (1992), 1004–1007 |
|
1991 |
13. |
N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “Туннельные эффекты в двумерной кремниевой транзисторной структуре”, Fizika i Tekhnika Poluprovodnikov, 25:9 (1991), 1613–1617 |
14. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, V. L. Sukhanov, “Фрактально-диффузионные $p{-}n$-переходы в кремнии”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 644–654 |
15. |
N. T. Bagraev, L. E. Klyachkin, V. L. Sukhanov, “TUNNEL EFFECTS IN QUANTUM-DIMENSIONAL SILICON TRANSISTOR”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991), 42–46 |
|
1990 |
16. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном геттерировании в кремнии
$n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1563–1573 |
17. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном генерировании в кремнии
$n$-типа. I. Геттерирующие микродефекты”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1557–1562 |
18. |
R. R. Vardanyan, L. E. Klyachkin, V. L. Sukhanov, “Четный магнитный фотоэффект в структурах с $p{-}n$-переходом
цилиндрической формы”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 485–487 |
|
1987 |
19. |
L. E. Klyachkin, A. M. Malyarenko, V. L. Sukhanov, L. M. Chistyakova, “CRITERIA OF OPTIMAL CLARIFICATION OF AN OPTIC-SYSTEM OF
AIR-SIOX-POLYCRYSTALLINE-SI-MONOCRYSTALLINE-SI IN THE SPECTRAL REGION
550-950-NM”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 823–826 |
20. |
N. T. Bagraev, A. L. Diikov, L. E. Klyachkin, V. A. Mashkov, V. L. Sukhanov, “Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1025–1029 |
|
1985 |
21. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, N. V. Zabrodskaya, “INVESTIGATION OF THE THIN
SIOX(O-GREATER-THAN-OR-EQUAL-TO-X-GREATER-THAN-OR-EQUAL-TO-2) FILMS ON
SPECTRAL CHARACTERISTICS OF SILICON P-N TRANSITIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2191–2195 |
22. |
V. M. Andreev, A. T. Gorelenok, M. Z. Zhingarev, L. E. Klyachkin, V. V. Mamutin, N. M. Saradzhishvili, B. I. Skopina, O. V. Sulima, N. M. Shmidt, “Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 668–673 |
23. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, “Photoelectric characteristics of the $Si\,O_{x}$ ($1\leqslant x \leqslant 2$)-polycrystal $Si-Ge$ system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 675–679 |
24. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, “Spectral characteristics of selective photo-detectors for the visible and ultraviolet-spectrum area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 354–358 |
|
1983 |
25. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, A. V. Nalivkin, V. L. Sukhanov, V. V. Tuchkevich, “Correction”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2232 ; Semiconductors, 17:12 (1983), 1431 |
26. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, A. V. Nalivkin, V. L. Sukhanov, V. V. Tuchkevich, “Исследование вольтамперных характеристик $p{-}n$-переходов
поликристаллический кремний–монокристаллический кремний”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1648–1651 |
|
|
|