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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
S. A. Karandashov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, “On the use of indium arsenide as the waveguide material in the measurements by attenuated total reflectance”, Optics and Spectroscopy, 129:9 (2021), 1193–1197 ; Optics and Spectroscopy, 129:11 (2021), 1231–1235 |
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2019 |
2. |
S. A. Karandashov, B. A. Matveev, M. A. Remennyi, “Indium arsenide-based spontaneous emission sources (review: a decade later)”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 147–157 ; Semiconductors, 53:2 (2019), 139–149 |
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2018 |
3. |
N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths”, Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 234–237 ; Tech. Phys., 63:2 (2018), 226–229 |
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2017 |
4. |
A. L. Zakhgeim, N. D. Il'inskaya, S. A. Karandashov, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, A. E. Chernyakov, “Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 269–275 ; Semiconductors, 51:2 (2017), 260–266 |
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2016 |
5. |
N. D. Il'inskaya, S. A. Karandashov, N. G. Karpukhina, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus, A. A. Usikova, “Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 657–662 ; Semiconductors, 50:5 (2016), 646–651 |
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1992 |
6. |
M. S. Aidaraliev, G. G. Zegrya, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Природа температурной зависимости пороговой плотности тока
длинноволновых лазеров на основе ДГС InAsSbP/InAs и InAsSbP/InAsSb”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 246–256 |
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1991 |
7. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “INASSBP-BASED LIGHT DIODES USED IN SMALL-SCALE ANALYZERS OF CARBON OXIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:23 (1991), 75–79 |
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1989 |
8. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, N. M. Stus, “Температурная зависимость люминесценции арсенида индия и твердых
растворов InAsSbP и InGaAs”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 592–596 |
9. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “LOW-THRESHOLD LASERS OF 3-3,5 MU-M BASED ON DHS INASSBP/IN1-XGAXAS1-YSBY”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989), 49–52 |
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1988 |
10. |
M. S. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “STIMULATED EMISSION (3-3.3 MU-M, 77-K) UNDER THE CURRENT INJECTION IN
PLASTICALLY DEFORMED DHS INASSBP/INAS LASERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988), 1617–1621 |
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1987 |
11. |
N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, Yu. Yu. Bilinets, “Luminescent Properties of Epitaxial Layers and $p{-}n$ Structures Based on In$_{1-x}$Ga$_{x}$As
(${0 < x < 0.23}$)”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1079–1084 |
12. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Injection coherent emission in $In\,As\,Sb\,P/In\,As/In\,As\,Sb\,P$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 563–565 |
13. |
M. Aidaraliev, N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Temperature-dependence of parameters of stimulated radiation in R-P structures based on $In\,As_{1-x}\,Sb_{x}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987), 329–331 |
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1986 |
14. |
N. V. Zotova, S. A. Karandashov, B. A. Matveev, N. M. Stus, G. N. Talalakin, “Coherent irradiation of 3,9-mu-m in R-P structures based on $Jn\,As\,Sb\,P$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986), 1444–1447 |
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1983 |
15. |
N. P. Esina, N. V. Zotova, S. A. Karandashov, G. M. Filaretova, “Структура металл–полупроводник на основе
$p$-InAs”, Fizika i Tekhnika Poluprovodnikov, 17:6 (1983), 991–996 |
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