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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
I. T. Serenkov, V. I. Sakharov, “The use of medium-energy atom beams for solid-state PIXE diagnostics”, Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021), 163–168   ; Tech. Phys., 66:1 (2021), 155–160  |
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2020 |
| 2. |
P. N. Aruev, V. P. Belik, V. V. Zabrodskii, E. M. Kruglov, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm”, Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392 ; Tech. Phys., 65:8 (2020), 1333–1339 |
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2019 |
| 3. |
N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, A. D. Bondarev, K. V. Karabeshkin, E. V. Fomin, A. E. Kalyadin, V. M. Mikushkin, E. I. Shek, E. V. Sherstnev, “Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440 ; Semiconductors, 53:4 (2019), 415–418 |
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| 4. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. O. Parshin, N. S. Melesov, S. G. Simakin, “Dislocation-related photoluminescence in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 165–168 ; Semiconductors, 53:2 (2019), 156–159 |
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| 5. |
N. A. Sobolev, O. V. Aleksandrov, V. I. Sakharov, I. T. Serenkov, E. I. Shek, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, “Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164 ; Semiconductors, 53:2 (2019), 153–155 |
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2018 |
| 6. |
A. V. Tumarkin, M. V. Zlygostov, I. T. Serenkov, V. I. Sakharov, V. V. Afrosimov, A. A. Odinets, “Initial stages of growth of barium zirconate titanate and barium stannate titanate films on single-crystal sapphire and silicon carbide”, Fizika Tverdogo Tela, 60:10 (2018), 2045–2050 ; Phys. Solid State, 60:10 (2018), 2091–2096 |
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| 7. |
Yu. A. Boikov, V. A. Danilov, I. T. Serenkov, V. I. Sakharov, M. P. Volkov, “Electro- and magnetotransport near a LaAlO$_{3}$/SrTiO$_{3}$ interphase boundary”, Fizika Tverdogo Tela, 60:6 (2018), 1223–1226 ; Phys. Solid State, 60:6 (2018), 1235–1238 |
| 8. |
Yu. A. Boikov, I. T. Serenkov, V. I. Sakharov, V. A. Danilov, “Influence of mechanical stresses on the charge state of the interface in the LaAlO$_{3}$/(001)SrTiO$_{3}$ heterostructures with a distorted stoichiometry”, Fizika Tverdogo Tela, 60:1 (2018), 171–174 ; Phys. Solid State, 60:1 (2018), 173–177 |
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| 9. |
S. V. Kidalov, V. V. Shnitov, M. V. Baidakova, M. M. Brzhezinskaya, A. T. Dideikin, M. S. Shestakov, D. A. Smirnov, I. T. Serenkov, V. I. Sakharov, V. V. Sokolov, N. I. Tatarnikov, A. Ya. Vul', “Chemical composition of surface and structure of defects in diamond single crystals produced from detonation nanodiamonds”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 21–24  |
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| 10. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
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2017 |
| 11. |
A. V. Tumarkin, I. T. Serenkov, V. I. Sakharov, S. V. Razumov, A. A. Odinets, M. V. Zlygostov, E. N. Sapego, V. V. Afrosimov, “Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate”, Fizika Tverdogo Tela, 59:12 (2017), 2352–2357 ; Phys. Solid State, 59:12 (2017), 2374–2380 |
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| 12. |
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Dislocation-related photoluminescence in silicon implanted with fluorine ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20 ; Tech. Phys. Lett., 43:1 (2017), 50–52 |
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2016 |
| 13. |
Yu. A. Boikov, I. T. Serenkov, V. I. Sakharov, T. Claeson, “Elastically strained and relaxed La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ films grown on lanthanum aluminate substrates with different orientations”, Fizika Tverdogo Tela, 58:12 (2016), 2469–2475 ; Phys. Solid State, 58:12 (2016), 2560–2566 |
| 14. |
A. V. Tumarkin, I. T. Serenkov, V. I. Sakharov, V. V. Afrosimov, A. A. Odinets, “Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire”, Fizika Tverdogo Tela, 58:2 (2016), 354–359 ; Phys. Solid State, 58:2 (2016), 364–369 |
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| 15. |
A. E. Aleksenskii, S. P. Vul', A. T. Dideikin, V. I. Sakharov, I. T. Serenkov, M. K. Rabchinskii, V. V. Afrosimov, “Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation”, Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016), 81–86 |
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2014 |
| 16. |
V. V. Afrosimov, A. T. Dideykin, V. I. Sakharov, I. T. Serenkov, S. P. Vul', “Utilizing of the Medium-Energy Ion Scattering spectrometry for the composition investigation of graphene oxide films on silicon surface”, Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014), 113–116 |
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1989 |
| 17. |
R. N. Ilin, V. I. Sakharov, I. T. Serenkov, “SCATTERING OF FAST NEGATIVE HYDROGEN-IONS UNDER THEIR COLLISION WITH
ATOMS-HE AND MOLECULES-H2”, Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989), 124–127 |
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1987 |
| 18. |
E. M. Verbitskaya, V. K. Eremin, A. M. Malyarenko, V. I. Sakharov, I. T. Serenkov, N. B. Strokan, V. L. Sukhanov, “Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 565–569 |
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