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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. Kandratov, I. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. Bakhvalov, P. S. Kop'ev, N. A. Pikhtin, “High-power multimode semiconductor lasers (976 nm) based on asymmetric heterostructures with a broadened waveguide and reduced vertical divergence”, Kvantovaya Elektronika, 53:5 (2023), 374–378  [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S976–S983] |
| 2. |
A. A. Podoskin, I. Shushkanov, V. V. Shamakhov, A. Rizaev, M. Kondratov, A. A. Klimov, S. V. Zazulin, S. O. Slipchenko, N. A. Pikhtin, “Laser diodes (850nm) based on an asymmetric AlGaAs/GaAs heterostructure with a bulk active region for generating high-power subnanosecond optical pulses”, Kvantovaya Elektronika, 53:1 (2023), 1–5 [Bull. Lebedev Physics Institute, 50:suppl. 5 (2023), S513–S519] |
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2022 |
| 3. |
S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskiy, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop'ev, N. A. Pikhtin, “High-power laser diodes based on InGaAs(Ð)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses”, Kvantovaya Elektronika, 52:12 (2022), 1152–1165 [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S494–S512] |
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2021 |
| 4. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, N. V. Voronkova, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “High-power CW InGaAs/AlGaAs (1070 nm) lasers with a broadened lateral waveguide of a mesa-stripe structure”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 344–348  ; Semiconductors, 55:4 (2021), 455–459 |
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| 5. |
I. S. Shashkin, A. Yu. Leshko, V. V. Shamakhov, D. N. Romanovich, V. A. Kapitonov, K. V. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Output optical power dynamics of semiconductor lasers (1070 nm) with a few-mode lateral waveguide of mesa-stripe design at ultrahigh drive currents”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 42–45 ; Tech. Phys. Lett., 47:5 (2021), 368–371 |
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| 6. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, K. V. Bakhvalov, V. V. Shamakhov, S. O. Slipchenko, V. V. Andryushkin, N. A. Pikhtin, “Optical absorption in a waveguide based on an n-type AlGaAs heterostructure”, Kvantovaya Elektronika, 51:11 (2021), 987–991 [Quantum Electron., 51:11 (2021), 987–991   ] |
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| 7. |
P. S. Gavrina, A. A. Podoskin, E. V. Fomin, D. A. Veselov, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light–current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures”, Kvantovaya Elektronika, 51:2 (2021), 129–132 [Quantum Electron., 51:2 (2021), 129–132 ] |
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2020 |
| 8. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, D. A. Veselov, N. A. Rudova, K. V. Bakhvalov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Single-mode lasers (1050 nm) of mesa-stripe design based on an AlGaAs/GaAs heterostructure with an ultra-narrow waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 414–419 ; Semiconductors, 54:4 (2020), 489–494 |
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| 9. |
I. S. Shashkin, A. Yu. Leshko, D. N. Nikolaev, V. V. Shamakhov, N. A. Rudova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, V. V. Zolotarev, S. O. Slipchenko, N. A. Pikhtin, P. S. Kop'ev, “Light characteristics of narrow-stripe high-power semiconductor lasers (1060 nm) based on asymmetric AlGaAs/GaAs heterostructures with a broad waveguide”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 408–413 |
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2019 |
| 10. |
V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin, “Study of multimode semiconductor lasers with buried mesas”, Kvantovaya Elektronika, 49:12 (2019), 1172–1174 [Quantum Electron., 49:12 (2019), 1172–1174 ] |
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| 11. |
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, L. S. Vavilova, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers”, Kvantovaya Elektronika, 49:7 (2019), 661–665 [Quantum Electron., 49:7 (2019), 661–665 ] |
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2017 |
| 12. |
P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132 ; Semiconductors, 51:1 (2017), 122–130 |
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2016 |
| 13. |
D. A. Veselov, I. S. Shashkin, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, M. G. Rastegaeva, S. O. Slipchenko, E. A. Bechvay, V. A. Strelets, V. V. Shamakhov, I. S. Tarasov, “On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1247–1252 ; Semiconductors, 50:9 (2016), 1225–1230 |
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2015 |
| 14. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure”, Kvantovaya Elektronika, 45:7 (2015), 604–606 [Quantum Electron., 45:7 (2015), 604–606 ] |
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| 15. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, V. A. Kapitonov, I. S. Tarasov, “Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers”, Kvantovaya Elektronika, 45:7 (2015), 597–600 [Quantum Electron., 45:7 (2015), 597–600 ] |
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2014 |
| 16. |
D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, I. S. Tarasov, “Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime”, Kvantovaya Elektronika, 44:11 (2014), 993–996 [Quantum Electron., 44:11 (2014), 993–996 ] |
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