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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
A. F. Zinov'eva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii, “Рост силицена методом молекулярно-лучевой эпитаксии на подложках CaF$_2$/Si(111), модифицированных электронным облучением”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024), 692–696  |
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2022 |
| 2. |
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 608–613 ; JETP Letters, 116:9 (2022), 628–633 |
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2021 |
| 3. |
A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev, L. V. Kulik, A. V. Dvurechenskii, “Electron spin resonance in heterostructures with ring molecules of GeSi quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021), 58–62  ; JETP Letters, 113:1 (2021), 52–56   |
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| 4. |
Zh. V. Smagina, V. A. Zinov'ev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii, “Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1210–1215 |
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| 5. |
V. A. Zinov'ev, A. V. Katsyuba, V. A. Volodin, A. F. Zinov'eva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Yu. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi, “Atomic structure and optical properties of CaSi$_2$ layers grown on CaF$_2$/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 725–728 ; Semiconductors, 55:10 (2021), 808–811 |
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2020 |
| 6. |
Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinov'ev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii, “Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 708–715 ; Semiconductors, 54:8 (2020), 853–859 |
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2019 |
| 7. |
A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsyuba, A. V. Dvurechenskii, A. K. Gutakovskii, L. V. Kulik, A. S. Bogomyakov, S. B. Erenburg, S. V. Trubina, M. Voelskow, “Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019), 258–264 ; JETP Letters, 109:4 (2019), 270–275 |
| 8. |
Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii, “Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1366–1371 ; Semiconductors, 53:10 (2019), 1329–1333 |
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2018 |
| 9. |
S. A. Rudin, Zh. V. Smagina, V. A. Zinov'ev, P. L. Novikov, A. V. Nenashev, E. E. Rodyakina, A. V. Dvurechenskii, “Nucleation of three-dimensional Ge islands on a patterned Si(100) surface”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1346–1350 ; Semiconductors, 52:11 (2018), 1457–1461 |
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| 10. |
Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033 ; Semiconductors, 52:9 (2018), 1150–1155 |
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2016 |
| 11. |
A. F. Zinovieva, V. A. Zinovyev, A. I. Nikiforov, V. A. Timofeev, A. V. Mudryi, A. V. Nenashev, A. V. Dvurechenskii, “Photoluminescence enhancement in double Ge/Si quantum dot structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016), 845–848 ; JETP Letters, 104:12 (2016), 823–826 |
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2004 |
| 12. |
A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov'ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov, “Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 79:7 (2004), 411–415 ; JETP Letters, 79:7 (2004), 333–336 |
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2001 |
| 13. |
A. V. Dvurechenskii, V. A. Zinov'ev, Zh. V. Smagina, “Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:5 (2001), 296–299 ; JETP Letters, 74:5 (2001), 267–269 |
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