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Publications in Math-Net.Ru |
Citations |
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1986 |
| 1. |
A. É. Bochkarev, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, “Injection InGaSbAs laser emitting at 2.4<i>μ</i> (300K)”, Kvantovaya Elektronika, 13:10 (1986), 2119–2120  [Sov J Quantum Electron, 16:10 (1986), 1397  ] |
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1984 |
| 2. |
V. P. Avdeeva, V. V. Bezotosnyi, M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, N. V. Mal'kova, M. G. Mil'vidskii, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “LOW-THRESHOLD INJECTION-LASERS BASED ON THICK GAINPAS/INP (1.2-1.6 MKM)
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 54:3 (1984), 551–557 |
| 3. |
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Injection InGaAsP/lnP lasers with a threshold current density of 0.5 kA/cm<sup>2</sup> at 300 Ê”, Kvantovaya Elektronika, 11:4 (1984), 645–646 [Sov J Quantum Electron, 14:4 (1984), 439–441 ] |
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| 4. |
M. G. Vasil'ev, L. M. Dolginov, A. E. Drakin, A. V. Ivanov, P. G. Eliseev, V. P. Konyaev, B. N. Sverdlov, V. A. Skripkin, V. I. Shveĭkin, E. G. Shevchenko, A. A. Shelyakin, G. V. Shepekina, “Three-layer waveguide InGaAsP/lnP injection lasers”, Kvantovaya Elektronika, 11:3 (1984), 631–633 [Sov J Quantum Electron, 14:3 (1984), 431–432 ] |
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1982 |
| 5. |
L. M. Dolginov, A. E. Drakin, V. P. Duraev, P. G. Eliseev, B. N. Sverdlov, V. A. Skripkin, E. G. Shevchenko, “Continuous-wave injection lasers emitting in the 1.5–1.6 μ range”, Kvantovaya Elektronika, 9:9 (1982), 1749 [Sov J Quantum Electron, 12:9 (1982), 1127 ] |
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1980 |
| 6. |
Ya. A. Aarik, L. M. Dolginov, A. E. Drakin, L. V. Druzhinina, P. G. Eliseev, P. A. Lyuk, B. N. Sverdlov, V. A. Skripkin, L. V. Friedentkhal', “Properties of AIGaAsSb–GaSb heterojunction injection lasers in the 1.4–1.8 $\mu m$ wavelength range”, Kvantovaya Elektronika, 7:1 (1980), 91–96 [Sov J Quantum Electron, 10:1 (1980), 50–53 ] |
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