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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. V. Baidakova, N. A. Bert, V. Yu. Davydov, A. V. Ershov, A. A. Levin, A. N. Smirnov, L. A. Sokura, O. M. Sreseli, I. N. Yassievich, “Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 882–889   |
| 2. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757 ; Semiconductors, 55:9 (2021), 731–734 |
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2020 |
| 3. |
O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskiy, N. A. Bert, A. V. Ershov, “Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1112–1116 ; Semiconductors, 54:10 (2020), 1315–1319 |
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| 4. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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2017 |
| 5. |
A. V. Boryakov, S. I. Surodin, D. E. Nikolichev, A. V. Ershov, “Chemical and phase compositions of multilayer nanoperiodic $a$-SiO$_{x}$/ZrO$_{2}$ structures subjected to high-temperature annealing”, Fizika Tverdogo Tela, 59:6 (2017), 1183–1191 ; Phys. Solid State, 59:6 (2017), 1206–1214 |
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| 6. |
D. A. Grachev, A. V. Ershov, I. A. Karabanova, A. V. Pirogov, A. V. Nezhdanov, A. I. Mashin, D. A. Pavlov, “Influence of the deposition and annealing temperatures on the luminescence of germanium nanocrystals formed in GeO$_{x}$ films and multilayer Ge/SiO$_{2}$ structures”, Fizika Tverdogo Tela, 59:5 (2017), 965–971 ; Phys. Solid State, 59:5 (2017), 992–998 |
| 7. |
S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, A. V. Ershov, A. I. Mashin, E. V. Parinova, D. N. Nesterov, D. A. Grachev, I. A. Karabanova, È. P. Domashevskaya, “Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 363–366 ; Semiconductors, 51:3 (2017), 349–352 |
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2016 |
| 8. |
N. V. Baidus, S. M. Nekorkin, D. A. Kolpakov, A. V. Ershov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko, “Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1509–1512 ; Semiconductors, 50:11 (2016), 1488–1492 |
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1999 |
| 9. |
N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 26:3 (1999), 217–218 [Quantum Electron., 29:3 (1999), 217–218  ] |
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1998 |
| 10. |
N. B. Zvonkov, B. N. Zvonkov, A. V. Ershov, E. A. Uskova, G. A. Maksimov, “Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate”, Kvantovaya Elektronika, 25:7 (1998), 622–624 [Quantum Electron., 28:7 (1998), 605–607 ] |
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1986 |
| 11. |
A. F. Khokhlov, A. I. Mashin, A. V. Ershov, Yu. A. Mordvinova, N. I. Mashin, “Electric and Optical Properties of the $a$-Si$_{1-x$Ge$_{x}$} Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1288–1291 |
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