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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747   ; Semiconductors, 55:10 (2021), 780–784 |
| 2. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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2020 |
| 3. |
A. N. Reznik, N. V. Vostokov, N. K. Vdovicheva, V. I. Shashkin, “Microwave volt–impedance spectroscopy of semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1944–1950 ; Tech. Phys., 65:11 (2020), 1859–1865 |
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2019 |
| 4. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314 ; Semiconductors, 53:10 (2019), 1279–1281 |
| 5. |
P. V. Volkov, N. V. Vostokov, A. V. Goryunov, L. M. Kukin, V. Parshin, E. A. Serov, V. I. Shashkin, “Detectors based on low-barrier mott diodes and their characteristics in the 150–250 GHz range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 56–58 ; Tech. Phys. Lett., 45:3 (2019), 239–241 |
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2017 |
| 6. |
S. Korolev, N. V. Vostokov, N. V. D'yakonova, V. I. Shashkin, “Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 746–753 ; Tech. Phys., 62:5 (2017), 765–772 |
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2002 |
| 7. |
N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429 ; JETP Letters, 76:6 (2002), 365–369  |
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2001 |
| 8. |
A. M. Alekseev, Yu. K. Verevkin, N. V. Vostokov, V. N. Petryakov, N. I. Polushkin, A. F. Popkov, N. N. Salashchenko, “Observation of laser-induced local modification of magnetic order in transition metal layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:4 (2001), 214–219 ; JETP Letters, 73:4 (2001), 192–196 |
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2000 |
| 9. |
V. I. Bredikhin, Yu. K. Verevkin, È. Ya. Daume, S. P. Kuznetsov, O. A. Malshakova, V. N. Petryakov, N. V. Vostokov, N. I. Polushkin, “Coherent effect of four XeCl laser beams on a surface”, Kvantovaya Elektronika, 30:4 (2000), 333–336 [Quantum Electron., 30:4 (2000), 333–336  ] |
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