|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
A. V. Voronin, V. Yu. Goryainov, V. V. Zabrodskii, E. V. Sherstnev, V. A. Kornev, P. N. Aruev, G. S. Kurskiev, N. A. Zhubr, A. S. Tukachinsky, “Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1922–1929   |
1
|
|
2020 |
| 2. |
P. N. Aruev, V. P. Belik, V. V. Zabrodskii, E. M. Kruglov, A. V. Nikolaev, V. I. Sakharov, I. T. Serenkov, V. V. Filimonov, E. V. Sherstnev, “Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm”, Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392 ; Tech. Phys., 65:8 (2020), 1333–1339 |
2
|
| 3. |
P. N. Aruev, A. I. Berlev, V. V. Zabrodskii, S. V. Zadorozhny, A. V. Nikolaev, N. A. Titov, E. V. Sherstnev, “Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup”, Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020), 693–698 ; Tech. Phys., 65:4 (2020), 666–671 |
| 4. |
E. V. Kalinina, A. A. Katashev, G. N. Violina, A. M. Strel'chuk, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373 ; Semiconductors, 54:12 (2020), 1628–1633 |
| 5. |
E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1244–1248 ; Semiconductors, 54:11 (2020), 1478–1482 |
1
|
| 6. |
A. E. Kalyadin, K. F. Shtel'makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek, N. A. Sobolev, “Silicon light-emitting diodes with luminescence from (113) defects”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 580–584 ; Semiconductors, 54:6 (2020), 687–690 |
5
|
| 7. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, M. Z. Shvarts, S. A. Levina, A. V. Nikolaev, “Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 195–201 ; Semiconductors, 54:2 (2020), 246–252 |
3
|
|
2019 |
| 8. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina, E. V. Ivanova, V. V. Zabrodskii, “Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 856–861 ; Semiconductors, 53:6 (2019), 844–849 |
7
|
| 9. |
V. V. Zabrodskii, P. N. Aruev, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 10–13 ; Tech. Phys. Lett., 45:12 (2019), 1226–1229 |
2
|
| 10. |
P. N. Aruev, B. Ya. Ber, A. N. Gorokhov, V. V. Zabrodskii, D. Yu. Kazantsev, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev, “Characteristics of a silicon avalanche photodiode for the near-IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 40–42 ; Tech. Phys. Lett., 45:8 (2019), 780–782 |
2
|
|
2018 |
| 11. |
E. E. Kholupenko, A. M. Bykov, F. A. Aharonyan, G. I. Vasiliev, A. M. Krassilchtchikov, P. N. Aruev, V. V. Zabrodskii, A. V. Nikolaev, “Detection of UV radiation from extensive air showers: prospects for Cherenkov gamma-ray astronomy”, Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018), 1655–1666 ; Tech. Phys., 63:11 (2018), 1603–1614 |
8
|
|
2017 |
| 12. |
A. M. Bykov, F. A. Aharonyan, A. M. Krassilchtchikov, E. E. Kholupenko, P. N. Aruev, D. A. Baiko, A. A. Bogdanov, G. I. Vasiliev, V. V. Zabrodskii, S. V. Troitsky, Yu. V. Tuboltsev, A. A. Kozhberov, K. P. Levenfish, Yu. V. Chichagov, “Cherenkov gamma-ray telescopes: Past, present, future. The ALEGRO project”, Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017), 803–821 ; Tech. Phys., 62:6 (2017), 819–836 |
13
|
| 13. |
A. O. Zahar'in, Yu. B. Vasil'ev, N. A. Sobolev, V. V. Zabrodskii, S. V. Egorov, A. V. Andrianov, “Injection-induced terahertz electroluminescence from silicon $p$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 632–636 ; Semiconductors, 51:5 (2017), 604–607 |
| 14. |
D. A. Borisevichus, V. V. Zabrodskii, S. G. Kalmykov, M. È. Sasin, R. Seisyan, “Absorption of the laser radiation by the laser plasma with gas microjet targets”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 53–60 ; Tech. Phys. Lett., 43:1 (2017), 67–70 |
2
|
|
2016 |
| 15. |
N. A. Sobolev, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, K. V. Karabeshkin, “Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions”, Fizika Tverdogo Tela, 58:12 (2016), 2411–2414 ; Phys. Solid State, 58:12 (2016), 2499–2502 |
4
|
| 16. |
N. A. Sobolev, K. F. Shtel'makh, A. E. Kalyadin, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, D. Yang, “Electroluminescence properties of LEDs based on electron-irradiated $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 254–258 ; Semiconductors, 50:2 (2016), 252–256 |
2
|
| 17. |
A. E. Kalyadin, N. A. Sobolev, A. M. Strel'chuk, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, “Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 250–253 ; Semiconductors, 50:2 (2016), 249–251 |
2
|
| 18. |
N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, A. N. Mikhaylov, D. I. Tetelbaum, “Si:Si LEDs with room-temperature dislocation-related luminescence”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 241–244 ; Semiconductors, 50:2 (2016), 240–243 |
11
|
| 19. |
E. V. Kalinina, G. N. Violina, V. P. Belik, A. V. Nikolaev, V. V. Zabrodskii, “Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 73–78 ; Tech. Phys. Lett., 42:10 (2016), 1057–1059 |
5
|
|
2012 |
| 20. |
P. N. Aruev, M. M. Barysheva, B. Ya. Ber, N. V. Zabrodskaya, V. V. Zabrodskii, A. Ya. Lopatin, A. E. Pestov, M. V. Petrenko, V. N. Polkovnikov, N. N. Salashchenko, V. L. Sukhanov, N. I. Chkhalo, “Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range”, Kvantovaya Elektronika, 42:10 (2012), 943–948 [Quantum Electron., 42:10 (2012), 943–948   ] |
24
|
|
| Organisations |
|
| |
|
|
Contact us: