|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 20, Pages 73–78
(Mi pjtf6283)
|
|
|
|
This article is cited in 5 scientific papers (total in 5 papers)
Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm
E. V. Kalininaa, G. N. Violinab, V. P. Belika, A. V. Nikolaeva, V. V. Zabrodskiia a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University
Abstract:
Electrical and spectrometric characteristics of 4$H$-SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4$H$-SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.
Received: 07.06.2016
Citation:
E. V. Kalinina, G. N. Violina, V. P. Belik, A. V. Nikolaev, V. V. Zabrodskii, “Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 73–78; Tech. Phys. Lett., 42:10 (2016), 1057–1059
Linking options:
https://www.mathnet.ru/eng/pjtf6283 https://www.mathnet.ru/eng/pjtf/v42/i20/p73
|
Statistics & downloads: |
Abstract page: | 31 | Full-text PDF : | 8 |
|