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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
Z. N. Sokolova, N. A. Pikhtin, S. O. Slipchenko, L. V. Asryan, “Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1229–1235   |
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2020 |
| 2. |
F. I. Zubov, M. E. Muretova, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, L. V. Asryan, “Parasitic recombination in a laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 296–303 ; Semiconductors, 54:3 (2020), 366–373 |
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2019 |
| 3. |
L. V. Asryan, “Quantum dot lasers with asymmetric barrier layers: Close-to-ideal threshold and power characteristics”, Kvantovaya Elektronika, 49:6 (2019), 522–528 [Quantum Electron., 49:6 (2019), 522–528   ] |
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2018 |
| 4. |
L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1518–1526 ; Semiconductors, 52:12 (2018), 1621–1629 |
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2017 |
| 5. |
Z. N. Sokolova, D. A. Veselov, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 998–1003 ; Semiconductors, 51:7 (2017), 959–964 |
14
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| 6. |
Yu. S. Polubavkina, F. I. Zubov, È. I. Moiseev, N. V. Kryzhanovskaya, M. V. Maksimov, E. S. Semenova, K. Yvind, L. V. Asryan, A. E. Zhukov, “Specific features of waveguide recombination in laser structures with asymmetric barrier layers”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 263–268 ; Semiconductors, 51:2 (2017), 254–259 |
2
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2016 |
| 7. |
L. V. Asryan, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1380–1386 ; Semiconductors, 50:10 (2016), 1362–1368 |
11
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| 8. |
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 679–682 ; Semiconductors, 50:5 (2016), 667–670 |
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| 9. |
Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure”, Kvantovaya Elektronika, 46:9 (2016), 777–781 [Quantum Electron., 46:9 (2016), 777–781 ] |
6
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2014 |
| 10. |
Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes”, Kvantovaya Elektronika, 44:9 (2014), 801–805 [Quantum Electron., 44:9 (2014), 801–805 ] |
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2013 |
| 11. |
Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells”, Kvantovaya Elektronika, 43:5 (2013), 428–432 [Quantum Electron., 43:5 (2013), 428–432 ] |
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2005 |
| 12. |
L. V. Asryan, “Spontaneous radiative recombination and nonradiative Auger recombination in quantum-confined heterostructures”, Kvantovaya Elektronika, 35:12 (2005), 1117–1120 [Quantum Electron., 35:12 (2005), 1117–1120 ] |
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