|
|
|
Publications in Math-Net.Ru |
Citations |
|
2024 |
| 1. |
Aleksandr I. Iliasov, Anna N. Matsukatova, Andrey V. Emelyanov, Pavel S. Slepov, Vladimir V. Rylkov, “Adapted MLP-Mixer network based on crossbar arrays of fast and multilevel switching $(\mathrm{Co}-\mathrm{Fe}-\mathrm{B})_x(\mathrm{LiNbO}_3)_{100-x}$ nanocomposite memristors”, Nanoscale Horiz., 9 (2024), 238–247  |
4
|
|
2023 |
| 2. |
A. N. Matsukatova, A. D. Trofimov, A. V. Emelyanov, “Temperature-induced transition between resistive switching modes of parylene-based memristive crossbar structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023), 355–360 ; JETP Letters, 118:5 (2023), 352–356 |
| 3. |
S. N. Nikolaev, K. Yu. Chernoglazov, A. V. Emelyanov, A. V. Sitnikov, A. N. Taldenkov, T. D. Patsaev, A. L. Vasil'ev, E. A. Gan'shina, V. A. Demin, N. S. Averkiev, A. B. Granovskii, V. V. Ryl'kov, “Anomalous behavior of the tunneling magnetoresistance in (CoFeB)$_x$(LiNbO$_3$)$_{100-x}$/Si nanocomposite film structures below the percolation threshold: manifestations of the cotunneling and exchange effects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 46–54 ; JETP Letters, 118:1 (2023), 58–66 |
1
|
|
2021 |
| 4. |
A. I. Ilyasov, A. V. Emelyanov, K. È. Nikiruy, A. A. Minnekhanov, E. V. Kukueva, I. A. Surazhevsky, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Frequency-coded control of the conductance of memristors based on nanoscale layers of LiNbO$_3$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ composite in trained spiking neural networks”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021), 3–7  ; Tech. Phys. Lett., 47:9 (2021), 656–660 |
2
|
|
2020 |
| 5. |
K. È. Nikiruy, A. I. Ilyasov, A. V. Emelyanov, A. V. Sitnikov, V. V. Ryl'kov, V. A. Demin, “Memristors based on nanoscale layers LiNbO$_{3}$ and (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$”, Fizika Tverdogo Tela, 62:9 (2020), 1562–1565 ; Phys. Solid State, 62:9 (2020), 1732–1735 |
7
|
| 6. |
A. N. Matsukatova, A. V. Emelyanov, A. A. Minnekhanov, V. A. Demin, V. V. Rylkov, P. A. Forsh, P. K. Kashkarov, “Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020), 379–386 ; JETP Letters, 112:6 (2020), 357–363   |
6
|
| 7. |
S. N. Nikolaev, A. V. Emelyanov, R. G. Chumakov, V. V. Ryl'kov, A. V. Sitnikov, M. Y. Presniakov, E. V. Kukueva, V. A. Demin, “The properties of memristive structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$, nanocomposites synthesized on SiO$_{2}$/Si substrates”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 257–263 ; Tech. Phys., 65:2 (2020), 243–249 |
2
|
| 8. |
B. S. Shvetsov, A. A. Minnekhanov, A. A. Nesmelov, M. N. Martyshov, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Conductance quantization in memristive structures based on poly-p-xylylene”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 913–917 ; Semiconductors, 54:9 (2020), 1103–1107 |
3
|
| 9. |
A. N. Matsukatova, A. V. Emelyanov, A. A. Minnekhanov, D. A. Saharutov, A. Yu. Vdovichenko, R. A. Kamyshinskiy, V. A. Demin, V. V. Ryl'kov, P. A. Forsh, S. N. Chvalun, P. K. Kashkarov, “Memristors based on poly($p$-xylylene) with embedded silver nanoparticles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 25–28 ; Tech. Phys. Lett., 46:1 (2020), 73–76 |
15
|
|
2019 |
| 10. |
B. S. Shvetsov, A. N. Matsukatova, A. A. Minnekhanov, A. A. Nesmelov, B. V. Goncharov, D. A. Lapkin, M. N. Martyshov, P. A. Forsh, V. V. Ryl'kov, V. A. Demin, A. V. Emelyanov, “Poly-para-xylylene-based memristors on flexible substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43 ; Tech. Phys. Lett., 45:11 (2019), 1103–1106 |
12
|
| 11. |
K. È. Nikiruy, A. V. Emelyanov, V. V. Ryl'kov, A. V. Sitnikov, V. A. Demin, “Adaptive properties of spiking neuromorphic networks with synapses based on memristive elements”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 19–23 ; Tech. Phys. Lett., 45:4 (2019), 386–390 |
16
|
|
2018 |
| 12. |
K. È. Nikiruy, A. V. Emelyanov, V. A. Demin, V. V. Ryl'kov, A. V. Sitnikov, P. K. Kashkarov, “A precise algorithm of memristor switching to a state with preset resistance”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 20–28 ; Tech. Phys. Lett., 44:5 (2018), 416–419 |
32
|
|
2013 |
| 13. |
A. V. Emelyanov, E. A. Konstantinova, P. A. Forsh, A. G. Kazanskii, M. V. Khenkin, N. N. Petrova, E. I. Terukov, D. A. Kirilenko, N. A. Bert, S. G. Konnikov, P. K. Kashkarov, “Features of the structure and defect states in hydrogenated polymorphous silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540 ; JETP Letters, 97:8 (2013), 466–469 |
10
|
|
| Organisations |
|
| |
|
|
Contact us: