Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2013, Volume 97, Issue 8, Pages 536–540
DOI: https://doi.org/10.7868/S0370274X13080067 (Mi jetpl3404) 		 
This article is cited in 10 scientific papers (total in 10 papers)

CONDENSED MATTER

Features of the structure and defect states in hydrogenated polymorphous silicon films

A. V. Emelyanova, E. A. Konstantinovaa, P. A. Forshab, A. G. Kazanskiia, M. V. Khenkina, N. N. Petrovaa, E. I. Terukovc, D. A. Kirilenkoc, N. A. Bertc, S. G. Konnikovc, P. K. Kashkarovac

a M. V. Lomonosov Moscow State University, Faculty of Physics
b National Research Centre "Kurchatov Institute"
c Ioffe Physico-Technical Institute, Russian Academy of Sciences
Full-text PDF (877 kB) Citations (10)
References:
PDF
HTML
DOI: https://doi.org/10.7868/S0370274X13080067
Abstract: The structural and electronic properties of thin hydrogenated polymorphous silicon films obtained by plasma-enhanced chemical vapor deposition from hydrogen (H$_2$) and monosilane (SiH$_4$) gas mixture have been studied by means of transmission electron microscopy, electron paramagnetic resonance (EPR) spectroscopy, and Raman spectroscopy. It has been established that the studied films consist of the amorphous phase containing silicon nanocrystalline inclusions with the average size on the order of $4$–$5$ nm and the volume fraction of $10\%$. A signal was observed in the hydrogenated polymorphous silicon films during the EPR investigation that is attributed to the electrons trapped in the conduction band tail of microcrystalline silicon. It has been shown that the introduction of a small fraction of nanocrystals into the amorphous silicon films nonadditively changes the electronic properties of the material.
Received: 13.02.2013
English version:
Journal of Experimental and Theoretical Physics Letters, 2013, Volume 97, Issue 8, Pages 466–469
DOI: https://doi.org/10.1134/S0021364013080079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Emelyanov, E. A. Konstantinova, P. A. Forsh, A. G. Kazanskii, M. V. Khenkin, N. N. Petrova, E. I. Terukov, D. A. Kirilenko, N. A. Bert, S. G. Konnikov, P. K. Kashkarov, “Features of the structure and defect states in hydrogenated polymorphous silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540; JETP Letters, 97:8 (2013), 466–469
Citation in format AMSBIB
\Bibitem{EmeKonFor13}
\by A.~V.~Emelyanov, E.~A.~Konstantinova, P.~A.~Forsh, A.~G.~Kazanskii, M.~V.~Khenkin, N.~N.~Petrova, E.~I.~Terukov, D.~A.~Kirilenko, N.~A.~Bert, S.~G.~Konnikov, P.~K.~Kashkarov
\paper Features of the structure and defect states in hydrogenated polymorphous silicon films
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2013
\vol 97
\issue 8
\pages 536--540
\mathnet{http://mi.mathnet.ru/jetpl3404}
\crossref{https://doi.org/10.7868/S0370274X13080067}
\elib{https://elibrary.ru/item.asp?id=20920419}
\transl
\jour JETP Letters
\yr 2013
\vol 97
\issue 8
\pages 466--469
\crossref{https://doi.org/10.1134/S0021364013080079}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000321129600006}
\elib{https://elibrary.ru/item.asp?id=20438677}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-84879729067}
Linking options:
  • https://www.mathnet.ru/eng/jetpl3404
  • https://www.mathnet.ru/eng/jetpl/v97/i8/p536
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:264
    Full-text PDF :77
    References:43
    First page:7
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024