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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 10, Pages 20–28
DOI: https://doi.org/10.21883/PJTF.2018.10.46095.17099
(Mi pjtf5801)
 

This article is cited in 32 scientific papers (total in 32 papers)

A precise algorithm of memristor switching to a state with preset resistance

K. È. Nikiruyab, A. V. Emelyanovab, V. A. Deminab, V. V. Ryl'kova, A. V. Sitnikovc, P. K. Kashkarovabd

a National Research Centre "Kurchatov Institute", Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow Region
c Voronezh State Technical University
d Lomonosov Moscow State University
Abstract: An algorithm of memristor switching with high precision to a state with preset resistance has been developed based on the application of voltage pulses with smoothly increasing amplitude and the duration varying randomly within preset limits. It is shown that the proposed algorithm can be implemented in memristor structures based on (Co$_{40}$Fe$_{40}$B$_{20}$)$_{x}$(LiNbO$_{3}$)$_{100-x}$ nanocomposites with $x\approx$ 10 at.%. Optimum parameters are selected for the algorithm operation with a minimum number of iterations that allows the accuracy of resistance setting to be no worse than 0.5%. The obtained results can be used in the creation of neuromorphic systems.
Funding agency Grant number
Russian Science Foundation 16-19-10233
Received: 30.10.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 5, Pages 416–419
DOI: https://doi.org/10.1134/S106378501805022X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. È. Nikiruy, A. V. Emelyanov, V. A. Demin, V. V. Ryl'kov, A. V. Sitnikov, P. K. Kashkarov, “A precise algorithm of memristor switching to a state with preset resistance”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 20–28; Tech. Phys. Lett., 44:5 (2018), 416–419
Citation in format AMSBIB
\Bibitem{NikEmeDem18}
\by K.~\`E.~Nikiruy, A.~V.~Emelyanov, V.~A.~Demin, V.~V.~Ryl'kov, A.~V.~Sitnikov, P.~K.~Kashkarov
\paper A precise algorithm of memristor switching to a state with preset resistance
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 10
\pages 20--28
\mathnet{http://mi.mathnet.ru/pjtf5801}
\crossref{https://doi.org/10.21883/PJTF.2018.10.46095.17099}
\elib{https://elibrary.ru/item.asp?id=32740284}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 5
\pages 416--419
\crossref{https://doi.org/10.1134/S106378501805022X}
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  • https://www.mathnet.ru/eng/pjtf/v44/i10/p20
  • This publication is cited in the following 32 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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